A fast-switching and short-circuit enhanced SOI LIGBT with a Self-Driving P-MOS

A fast-switching and short-circuit enhanced LIGBT with integrated Self-Driving P-channel MOS, named SDP-LIGBT is demonstrated by the TCAD SENTAURUS. The SDP consists of P + Emitter (Drain), N-type Carrier Store (N-CS Substrate) and P-shield (Source), and the gate of the SDP (PG) is shortly connected with the P + Emitter, thus the V_PG,S equals V_DS. Consequently, the SDP can be triggered on with saturate state without extra control signal. At the forward conduction, the SDP is automatically turned on with the increased V_CE, then the saturation current is remarkably decreased due to division of LIGBT part and SDP part. Moreover, the N-CS substrate of the SDP acts as the hole barrier, which further decreased the on-state voltage drop (V_ON). At the turn-off process, the SDP is also automatically turned on to extract excessive carriers with the increased bus voltage V_CE, thus the turn-off speed and turn-off energy loss (E_OFF) is effectively reduced. As a result, the SDP-LIGBT achieves superior trade-off relationship between V_ON and E_OFF. Furthermore, the short-circuit property of SDP-LIGBT is also significantly enhanced.