在稳定的过氧化物太阳能电池中逐步实现同质结的螺氨过氧化物锚定过氧化物

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-11-01 DOI:10.1016/j.sse.2024.109003
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引用次数: 0

摘要

界面能量修饰在界面缺陷钝化和最佳界面能级匹配中的作用被认为是一个至关重要的方面。通过这种策略可以提高过氧化物太阳能电池(PSCs)的性能和耐用性。在这里,螺-OMeTAD [2,2′,7,7′-四(N,N-二对甲氧基苯胺)-9,9′-螺二芴] 通过氯苯反溶剂策略被吸附到旋转的过氧化物前驱体薄膜上。研究发现,螺-OMeTAD 不仅可以作为晶界的填充物,还可以覆盖在透辉石的晶粒上,进而形成透辉石与螺-OMeTAD 孔传输层的渐变同结界面,这可以使螺-OMeTAD 通过 Pb2+ 与 C-O 基团之间的反应锚定透辉石,从而降低界面势垒,使二者之间获得最佳的界面能级匹配,以实现孔的迁移和收集。此外,这些填充物或覆盖物还能防止水分侵入包晶。因此,对应的 PSC 实现了 24.46% 的冠军效率,并在储存 224 天后保持了超过 88% 的初始效率。
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Spiro-OMeTAD Anchoring perovskite for gradual homojunction in stable perovskite solar cells
The role of interface energetics-modification in interface-defect passivation and optimal interface energy-level matching is assumed to be a crucial aspect. Enhancing the performance and durability of perovskite solar cells (PSCs) can be achieved through this strategy. Here, spiro-OMeTAD [2,2′,7,7′-tetrakis (N, N-di-p-methoxyphenylamine)-9,9′-spirobifluorene] has been pipetted onto the spinning perovskite precursor film via a chlorobenzene anti-solvent strategy. It is found that spiro-OMeTAD serves as not only the filler at grain boundaries, but also the coverage on perovskite’s grain, and then forms the gradual homojunction interface from perovskite to spiro-OMeTAD hole transport layer, which can make spiro-OMeTAD anchor perovskite via the reaction between Pb2+ and C-O groups to decrease the interface barrier and obtain the optimal interface energy-level match between them for hole −migration and −collection. Moreover, these fillers or coverages can prevent moisture invading perovskite. Consequently, the counterpart PSC achieves a champion efficiency of 24.46 %, and has retained more than 88 % of the initial efficiency after 224 days of storage.
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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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