市售自由空间硅单光子雪崩二极管的干扰效应

IF 3.5 2区 物理与天体物理 Q2 PHYSICS, APPLIED Applied Physics Letters Pub Date : 2024-11-08 DOI:10.1063/5.0225337
L. Arabskyj, B. Dejen, T. S. Santana, M. Lucamarini, C. J. Chunnilall, P. R. Dolan
{"title":"市售自由空间硅单光子雪崩二极管的干扰效应","authors":"L. Arabskyj, B. Dejen, T. S. Santana, M. Lucamarini, C. J. Chunnilall, P. R. Dolan","doi":"10.1063/5.0225337","DOIUrl":null,"url":null,"abstract":"Single-photon avalanche diodes (SPADs) are essential for photon-based measurements and metrology, enabling measurement comparisons at the few-photon level and facilitating global traceability to the SI. A spatially uniform detector response is crucial for these applications. Here, we report on interference effects in commercially available silicon SPADs that are detrimental to their spatial uniformity. Contrasts as high as 18% are observed, posing problems for metrology and general applications that utilize coherent light and require stable detection efficiencies. We eliminate the device optical window as a contributing interface, isolating likely causes to anti-reflective coatings, the semiconductor surface, and the SPAD's internal structure. We also present results where we leverage this sub-optimal behavior by aligning an incident beam with the position of maximum constructive interference, yielding an effective detection efficiency of 51.1(1.7)% compared to the normal value of 44.3(1)% obtained with the interference suppressed. We anticipate that this work will significantly impact the continuing development of these devices, the methods for characterizing them, and their use in accurate measurements.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interference effects in commercially available free-space silicon single-photon avalanche diodes\",\"authors\":\"L. Arabskyj, B. Dejen, T. S. Santana, M. Lucamarini, C. J. Chunnilall, P. R. Dolan\",\"doi\":\"10.1063/5.0225337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-photon avalanche diodes (SPADs) are essential for photon-based measurements and metrology, enabling measurement comparisons at the few-photon level and facilitating global traceability to the SI. A spatially uniform detector response is crucial for these applications. Here, we report on interference effects in commercially available silicon SPADs that are detrimental to their spatial uniformity. Contrasts as high as 18% are observed, posing problems for metrology and general applications that utilize coherent light and require stable detection efficiencies. We eliminate the device optical window as a contributing interface, isolating likely causes to anti-reflective coatings, the semiconductor surface, and the SPAD's internal structure. We also present results where we leverage this sub-optimal behavior by aligning an incident beam with the position of maximum constructive interference, yielding an effective detection efficiency of 51.1(1.7)% compared to the normal value of 44.3(1)% obtained with the interference suppressed. We anticipate that this work will significantly impact the continuing development of these devices, the methods for characterizing them, and their use in accurate measurements.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2024-11-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0225337\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0225337","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

摘要

单光子雪崩二极管(SPAD)对基于光子的测量和计量至关重要,它可以在几个光子的水平上进行测量比较,并促进全球溯源至 SI。空间均匀的探测器响应对这些应用至关重要。在此,我们报告了市售硅 SPAD 中的干扰效应,这种效应不利于其空间均匀性。观察到的对比度高达 18%,这给利用相干光和要求稳定检测效率的计量和一般应用带来了问题。我们将器件光学窗口排除在外,将可能的原因隔离到抗反射涂层、半导体表面和 SPAD 内部结构之外。我们还展示了通过将入射光束对准最大建设性干扰位置来利用这种次优行为的结果,结果显示有效检测效率为 51.1(1.7)%,而在干扰被抑制的情况下,正常值为 44.3(1)%。我们预计,这项工作将对这些设备的持续发展、表征这些设备的方法及其在精确测量中的应用产生重大影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Interference effects in commercially available free-space silicon single-photon avalanche diodes
Single-photon avalanche diodes (SPADs) are essential for photon-based measurements and metrology, enabling measurement comparisons at the few-photon level and facilitating global traceability to the SI. A spatially uniform detector response is crucial for these applications. Here, we report on interference effects in commercially available silicon SPADs that are detrimental to their spatial uniformity. Contrasts as high as 18% are observed, posing problems for metrology and general applications that utilize coherent light and require stable detection efficiencies. We eliminate the device optical window as a contributing interface, isolating likely causes to anti-reflective coatings, the semiconductor surface, and the SPAD's internal structure. We also present results where we leverage this sub-optimal behavior by aligning an incident beam with the position of maximum constructive interference, yielding an effective detection efficiency of 51.1(1.7)% compared to the normal value of 44.3(1)% obtained with the interference suppressed. We anticipate that this work will significantly impact the continuing development of these devices, the methods for characterizing them, and their use in accurate measurements.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
期刊最新文献
Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs Deep learning-driven super-resolution in Raman hyperspectral imaging: Efficient high-resolution reconstruction from low-resolution data TCAD-based investigation of 1/f noise in advanced 22 nm FDSOI MOSFETs Coherence of NV defects in isotopically enriched 6H-28SiC at ambient conditions Molecular beam epitaxy and band structures of type-II antiferromagnetic semiconductor EuTe thin films
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1