Haibin Wang , Zhichao Nie , Xiaofeng Huang , Jianghao Gu , Zhixin Tan , Hantao Jing , Lihua Mo , Zhiliang Hu , Xueming Wang
{"title":"负栅极电压对 SiC MOSFET 中子诱发的单事件效应的影响","authors":"Haibin Wang , Zhichao Nie , Xiaofeng Huang , Jianghao Gu , Zhixin Tan , Hantao Jing , Lihua Mo , Zhiliang Hu , Xueming Wang","doi":"10.1016/j.microrel.2024.115547","DOIUrl":null,"url":null,"abstract":"<div><div>Atmospheric neutrons can cause failures in SiC power devices, especially in critical components such as SiC MOSFETs. SiC MOSFETs typically employ a negative gate bias in the off-state to prevent unnecessary false turn-on. However, this gate voltage in the off-state can influence the sensitivity to single-event effects (SEEs). In this paper, the impact of negative gate voltage on neutron-induced SEEs in SiC MOSFETs is investigated and analyzed. A high-precision irradiation test system is designed, upon which neutron irradiation experiments have been conducted at various drain-source voltages, each corresponding to two different gate-source voltages. The experimental results demonstrate that negative gate voltage increases the failure rate of SEEs. Based on Sentaurus TCAD, a 2D TCAD model of SiC MOSFET has been established for simulation, and the dependence of single-event gate rupture (SEGR) on negative gate voltage is analyzed, as well as its impact mechanism on single-event burnout (SEB).</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"163 ","pages":"Article 115547"},"PeriodicalIF":1.6000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The impact of negative gate voltage on neutron-induced single event effects for SiC MOSFETs\",\"authors\":\"Haibin Wang , Zhichao Nie , Xiaofeng Huang , Jianghao Gu , Zhixin Tan , Hantao Jing , Lihua Mo , Zhiliang Hu , Xueming Wang\",\"doi\":\"10.1016/j.microrel.2024.115547\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Atmospheric neutrons can cause failures in SiC power devices, especially in critical components such as SiC MOSFETs. SiC MOSFETs typically employ a negative gate bias in the off-state to prevent unnecessary false turn-on. However, this gate voltage in the off-state can influence the sensitivity to single-event effects (SEEs). In this paper, the impact of negative gate voltage on neutron-induced SEEs in SiC MOSFETs is investigated and analyzed. A high-precision irradiation test system is designed, upon which neutron irradiation experiments have been conducted at various drain-source voltages, each corresponding to two different gate-source voltages. The experimental results demonstrate that negative gate voltage increases the failure rate of SEEs. Based on Sentaurus TCAD, a 2D TCAD model of SiC MOSFET has been established for simulation, and the dependence of single-event gate rupture (SEGR) on negative gate voltage is analyzed, as well as its impact mechanism on single-event burnout (SEB).</div></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"163 \",\"pages\":\"Article 115547\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424002270\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424002270","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
大气中的中子会导致碳化硅功率器件发生故障，尤其是碳化硅 MOSFET 等关键元件。SiC MOSFET 通常在关断状态采用负栅极偏置，以防止不必要的误导通。然而，这种关断状态下的栅极电压会影响对单次事件效应（SEE）的灵敏度。本文研究和分析了负栅极电压对 SiC MOSFET 中子诱发 SEE 的影响。设计了一个高精度辐照测试系统，并在该系统上进行了不同漏极-源极电压下的中子辐照实验，每个漏极-源极电压对应两个不同的栅极-源极电压。实验结果表明，负栅极电压会增加 SEE 的失效率。基于 Sentaurus TCAD，建立了 SiC MOSFET 的二维 TCAD 模型进行仿真，分析了单事件栅极破裂（SEGR）与负栅极电压的关系，以及其对单事件烧毁（SEB）的影响机制。
The impact of negative gate voltage on neutron-induced single event effects for SiC MOSFETs
Atmospheric neutrons can cause failures in SiC power devices, especially in critical components such as SiC MOSFETs. SiC MOSFETs typically employ a negative gate bias in the off-state to prevent unnecessary false turn-on. However, this gate voltage in the off-state can influence the sensitivity to single-event effects (SEEs). In this paper, the impact of negative gate voltage on neutron-induced SEEs in SiC MOSFETs is investigated and analyzed. A high-precision irradiation test system is designed, upon which neutron irradiation experiments have been conducted at various drain-source voltages, each corresponding to two different gate-source voltages. The experimental results demonstrate that negative gate voltage increases the failure rate of SEEs. Based on Sentaurus TCAD, a 2D TCAD model of SiC MOSFET has been established for simulation, and the dependence of single-event gate rupture (SEGR) on negative gate voltage is analyzed, as well as its impact mechanism on single-event burnout (SEB).
期刊介绍：
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
