用于光催化降解染料溶液(BB 和 BG 染料)的掺镁 PbMoO4 尖晶石的合成

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-21 DOI:10.1007/s10854-024-13840-6
M. Niranjana, S. Akilandeswari, G. Rajesh, D. Govindarajan
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引用次数: 0

摘要

本研究介绍了一种新型掺镁 PbMoO4 尖晶石,该尖晶石可用于光催化降解染料溶液,特别是 BB 和 BG 染料。通过共沉淀法合成了裸PbMoO4和掺杂Mg的PbMoO4,并利用XRD、DRS、PL、FT-IR、SEM、HR-TEM和XPS技术分析了其材料的结构、形态、光学和振动特性。XRD 结果表明,裸 PbMoO4 和掺杂镁(0.025-0.075 M)的 PbMoO4 具有四方体系,没有其他相阶。DRS 分析证实,随着镁含量从 0.025 M 增加到 0.075 M,掺入的镁会改变 PbMoO4 的能隙。XPS 和 PL 光谱显示,掺入镁会诱发缺陷态或氧空位,从而阻止电荷载流子的重组。掺杂镁(0.050 M)的 PbMoO4 纳米粒子的 SEM 和 HR-TEM 显微照片显示,某些粒子呈球形,有轻微的团聚。这些颗粒的尺寸约为 25 纳米。评估了裸露和掺镁 PbMoO4 催化剂在可见光照射下去除 BG 和 BB 染料溶液的光降解活性。研究了辐照时间、pH 值、催化剂用量、COD 和活性物种等参数对 BG 和 BB 光降解的影响。掺入镁(0.050 M)的 PbMoO4 经过 120 分钟的辐照后,在 pH = 7 的条件下,BG 和 BB 的去除率分别为 99% 和 95%;而裸纳米粒子经过 120 分钟的可见光辐照后,BG 和 BB 的降解率分别为 35% 和 32%。在优化环境下,验证了掺杂镁(0.050 M)的 PbMoO4 的可回收性。结果表明,掺杂镁(0.050 M)的 PbMoO4 纳米粒子具有良好的稳定性,在第六次催化循环后,降解率分别超过 90% 和 89%。自由基清除试验表明,-OH、h+ 和 -O2- 自由基在 BG 和 BB 降解中发挥了主要作用。COD 研究证实了 BG 和 BB 染料分子的完全矿化。研究结果表明,掺杂镁的 PbMoO4 纳米粒子具有很强的催化剂稳定性,是去除废水中 BG 和 BB 的理想选择。
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Synthesis of Mg-doped PbMoO4 spinel for photocatalytic degradation of dye solutions (BB and BG dyes)

This study introduces a novel Mg-doped PbMoO4 spinel that is used for the photocatalytic degradation of dye solutions, specifically BB and BG dyes. The bare and Mg-doped PbMoO4 were synthesized by co-precipitation method and their materials were analyzed by XRD, DRS, PL, FT-IR, SEM, HR-TEM, and XPS techniques to determine the structural, morphological, optical, and vibrational properties. The XRD outcomes display that bare and Mg (0.025–0.075 M)-doped PbMoO4 possess a tetragonal system with no other phase step. DRS analysis affirmed that Mg doping alters the energy gaps of PbMoO4 with increasing Mg content from 0.025 to 0.075 M, respectively. XPS and PL spectra revealed that Mg doping induced defect states or oxygen vacancies, which prevented charge carrier recombination. SEM and HR-TEM micrographs of Mg (0.050 M)-doped PbMoO4 nanoparticles exhibit certain particles that are spherical with slight agglomeration. These particle sizes are determined around 25 nm. The photodegradation activity of bare and Mg-doped PbMoO4 catalyst was assessed in the removal of BG and BB dye solutions under visible irradiation. The consequence of several parameters, including irradiation time, pH, catalyst dosage, COD and reactive species, on the photodegradation of BG and BB was examined. With Mg (0.050 M)-doped PbMoO4 after 120 min irradiation, 99 and 95% of BG and BB removal was observed in pH = 7 conditions, while with bare nanoparticles only 35 and 32% BG and BB were degraded upon visible irradiation for 120 min. The recyclable of the Mg (0.050 M)-doped PbMoO4 was verified under optimized environments. The outcomes establish that Mg (0.050 M)-doped PbMoO4 nanoparticles exhibit substantially good stability with above 90 and 89% degradation after the sixth catalytic cycle. The scavenging (free radicals) tests revealed that OH, h+, and O2 radicals play main roles in BG and BB degradation. COD studies affirmed the whole mineralization of BG and BB dye molecules. The results reveal Mg-doped PbMoO4 nanoparticles can be the superior candidates with strong catalyst stability for the removal of BG and BB in wastewater.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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