比较不同的 α-Fe2O3 源在降解内分泌干扰物混合物过程中增强氧化锌光催化活性的作用

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-20 DOI:10.1016/j.mssp.2024.109125
Pedro César Quero-Jiménez , Aracely Hernández-Ramírez , Jorge Luis Guzmán-Mar , David Avellaneda Avellaneda , Laura Hinojosa-Reyes
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引用次数: 0

摘要

以 MOF235(Fe)、NH2-MOF235(Fe)和 FeOOH 为 α-Fe2O3 前驱体,通过微波辅助沉淀和 450 ℃ 后煅烧合成了 α-Fe2O3/ZnO 复合材料。热重分析 (TGA)、X 射线粉末衍射 (XRD)、傅立叶变换红外光谱 (FTIR)、N2 物理吸附分析、使用全集成 EDS 检测器的扫描电子显微镜 (SEM-EDS)、X 射线光电子能谱 (XPS) 和电化学实验用于表征制备的材料。将 MOF235(Fe)-、NH2-MOF235(Fe)- 和 FeOOH 衍生的 α-Fe2O3 偶联到 ZnO 中,提高了 ZnO 的比表面积值和可见光区的光吸收率。NH2-MOF235(Fe) 衍生的 α-Fe2O3/ZnO 可增强光生电荷分离,延缓 e-/h+ 重组速率,降低电荷转移电阻,从而提高光催化活性。在 pH 值为 7.0 的模拟太阳光条件下,使用 0.5 g L-1 的催化剂负载,评估了 α-Fe2O3/ZnO 复合材料降解双酚 A、4-叔丁基苯酚和 4-叔辛基苯酚混合物溶液的光催化活性。在 330 分钟(600 kJ m-2 的累积能量)内,MOF235(Fe)-、NH2-MOF235(Fe)- 和 FeOOH 衍生的 α-Fe2O3/ZnO 对内分泌干扰化合物 (EDC) 的矿化率分别为 36.76%、42.25% 和 19.92%。使用 ECOSAR 程序对 NH2-MOF235(Fe)_α-Fe2O3/ZnO 光催化剂产生的副产品的急性毒性进行评估的 QSAR 方法表明,废水对三种目标营养模型(鱼类、水蚤和绿藻)均无毒性。这一结果与鱼弧菌生物发光抑制试验的结果一致,使用 NH2-MOF235(Fe)_α-Fe2O3/ZnO 的污水被归类为无毒。因此,NH2-MOF235(Fe)可成功用作α-Fe2O3 前体,生成α-Fe2O3/ZnO 复合材料,这是一种很有前景的从水溶液中去除 EDC 的材料。
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Comparison of different α-Fe2O3 sources in the enhancement of ZnO photocatalytic activity during the degradation of a mixture of endocrine-disruptors
α-Fe2O3/ZnO composites were synthesized using MOF235(Fe), NH2–MOF235(Fe), and FeOOH as α-Fe2O3 precursors via microwave-assisted precipitation and post-calcination at 450 °C. Thermogravimetric analyses (TGA), X-ray powder diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), N2 physisorption analysis, scanning electron microscopy using a fully integrated EDS detector (SEM–EDS), X-ray photoelectron spectroscopy (XPS), and electrochemical experiments were employed to characterize the prepared materials. The coupling of MOF235(Fe)-, NH2–MOF235(Fe)-, and FeOOH-derived α-Fe2O3 into ZnO increased the specific surface area values and light absorption in the visible region of ZnO. The NH2–MOF235(Fe)-derived α-Fe2O3/ZnO allowed enhanced photogenerated charge separation with retarded e/h+ recombination rate and reduced charge-transfer resistance, promoting superior photocatalytic activity. The photocatalytic activity of α-Fe2O3/ZnO composites was evaluated in the degradation of bisphenol A, 4-tert-butylphenol, and 4-tert-octylphenol mixture solution at pH 7.0 under simulated solar light using 0.5 g L−1 catalyst loading. The mineralization percentages of endocrine-disrupting compounds (EDCs) of 36.76%, 42.25%, and 19.92% occurred in 330 min (600 kJ m−2 of accumulated energy) for MOF235(Fe)-, NH2–MOF235(Fe)-, and FeOOH-derived α-Fe2O3/ZnO, respectively. The QSAR approach using the ECOSAR program to evaluate the acute toxicity of the by-products generated with the NH2–MOF235(Fe)_α-Fe2O3/ZnO photocatalyst showed that the effluent was nontoxic for the three target trophic models (fish, Daphnia, and green algae). This result was consistent with those of the Vibrio fischeri bioluminescence inhibition assay, where the effluents using NH2–MOF235(Fe)_α-Fe2O3/ZnO were classified as nontoxic. Thus, NH2–MOF235(Fe) can be successfully used as an α-Fe2O3 precursor to generate an α-Fe2O3/ZnO composite, which is a promising material for removing EDCs from aqueous solutions.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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