用于光子应用的 V2O5 掺杂 Cr2O3 薄膜的微结构表征、电学和光学研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-27 DOI:10.1007/s10854-024-13869-7
Adel M. El Sayed, Faisal Katib Alanazi
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引用次数: 0

摘要

过渡金属(TM)氧化物薄膜的性能和光电特性可以通过掺杂其他材料得到增强。本研究采用溶胶-凝胶法制备了 V2O5 纳米粒子(NPs),然后利用旋涂技术制备了掺杂 V2O5 的 Cr2O3 薄膜。研究了薄膜的微观结构、形态特征、I-V 测量和光学特性。XRD、FE-SEM、EDAX 和 FTIR 测量结果表明,掺入 V2O5 后,Cr2O3 薄膜具有多晶性质、粒状形貌、粒径减小(从 43 ± 2.58 nm 减小到 21 ± 1.25 nm)、结晶度降低以及 Cr-O 和 Cr-O-Cr 的拉伸振动受限。掺杂没有改变 Cr2O3 的斜方刚玉结构。薄膜表现出线性 I-V 行为,其电阻随掺杂量的增加而降低。薄膜的透明度很高(高达 88%),在可见光区域的吸收率极低。新的折射率在 0.255-0.270 之间。折射率随波长呈钟形变化,并随 V2O5 的增加而增加。此外,薄膜的光带隙(Eg)从 3.0 eV 下降到 2.5 eV。研究了 0.5-5.0% V2O5 掺杂比对晶粒尺寸、位错密度、微应变和电荷载流子浓度的影响。研究结果表明,掺杂 V2O5 的 Cr2O3 薄膜的光电特性得到了改善,可用于各种光电和光子器件。
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Microstructural characterization, electrical, and optical study of V2O5-doped Cr2O3 films for photonic applications

The performance and optoelectronic properties of the transition metal (TM) oxide thin films can be enhanced by doping with other materials. In this study, V2O5 nanoparticles (NPs) were prepared by sol–gel and then used to prepare V2O5-doped Cr2O3 thin films using the spin-coating technique. The microstructural, morphological characterization, I–V measurements, and optical properties of the films were investigated. The XRD, FE-SEM, EDAX, and FTIR measurements revealed the polycrystalline nature, granular morphology, reduction in particle size (from 43 ± 2.58 nm to 21 ± 1.25 nm), crystallinity deterioration, and the limited stretching vibrations of Cr–O and Cr–O–Cr upon inclusion of V2O5. The doping didn’t alter the rhomoboedric corundum structure of Cr2O3. The films exhibited linear I–V behavior and their resistance decreased with doping. The films are highly transparent (up to 88%), and their absorption was minimal in the visible region. A new figure of merit was in the range of 0.255–0.270. The refractive index has bell-shaped behavior with the wavelength and increased with increasing V2O5. Additionally, the optical band gap (Eg) of the films decreased from 3.0 to 2.5 eV. The influences of 0.5–5.0% V2O5 doping ratio on the grain size, dislocation density, microstrain, and charge carrier concentration were investigated. The finding of this study indicates that the optoelectronic features of V2O5-doped Cr2O3 films were improved and the films can be used for various optoelectronic and photonic devices.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
期刊最新文献
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