{"title":"弱耦合铁电弛豫剂BaTiO3-Bi (Mg0.5Ti0.5)O3 -Bi (Mg0.5Sn0.5)O3体系的储能效率≥99.5%","authors":"Riyu Guan, Kaiyuan Chen, Feifei Han, Zhi Yuan, Dingyuan Wang, Yisong Bai, Xue Chen, Biaolin Peng, Shiguang Yan, Dongyan Yu, Xiuyun Lei, Laijun Liu","doi":"10.1007/s10854-024-14154-3","DOIUrl":null,"url":null,"abstract":"<div><p>High efficiency (<i>η</i>) is urgently desired for electronic energy storage devices. In this work, an extremely high energy storage efficiency (~ 99.5%) and energy storage density of 2.83 J/cm<sup>3</sup> are achieved in lead-free relaxor ferroelectric (1–<i>x</i>)(0.9BaTiO<sub>3</sub>–0.1BiMg<sub>0.5</sub>Ti<sub>0.5</sub>O<sub>3</sub>)-<i>x</i>Bi(Mg<sub>0.5</sub>Sn<sub>0.5</sub>)O<sub>3</sub>[(1–<i>x</i>) (0.9BT–0.1BMT)–<i>x</i>BMS] ceramic (<i>x</i> = 0.09). Excellent temperature stability with a variation of <i>η</i> less than 1.5% is also obtained in a wide temperature range from 30 to 150 °C. Temperature dependence of the dielectric permittivity of (1–<i>x</i>)(0.9BT–0.1BMT)-<i>x</i>BMS exhibits a typical dipolar-glass-like relaxor ferroelectric behavior. As a result, the ultra-high efficiency of the ceramic is attributed to the weak-coupling polar nanoregions (PNRs) which are analyzed using the Vogel-Fulcher formula and phenomenological statistical model. These results not only help to understand the origin of high efficiency in the (1–<i>x</i>)(0.9BT–0.1BMT)-<i>x</i>BMS system but also provide an effective approach to improve the comprehensive properties of other lead-free ceramic systems used in next-generation power capacitors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 2","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Energy storage efficiency ≥ 99.5% achieved in weak-coupling ferroelectric relaxor BaTiO3–Bi(Mg0.5Ti0.5)O3 –Bi(Mg0.5Sn0.5)O3 system\",\"authors\":\"Riyu Guan, Kaiyuan Chen, Feifei Han, Zhi Yuan, Dingyuan Wang, Yisong Bai, Xue Chen, Biaolin Peng, Shiguang Yan, Dongyan Yu, Xiuyun Lei, Laijun Liu\",\"doi\":\"10.1007/s10854-024-14154-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>High efficiency (<i>η</i>) is urgently desired for electronic energy storage devices. In this work, an extremely high energy storage efficiency (~ 99.5%) and energy storage density of 2.83 J/cm<sup>3</sup> are achieved in lead-free relaxor ferroelectric (1–<i>x</i>)(0.9BaTiO<sub>3</sub>–0.1BiMg<sub>0.5</sub>Ti<sub>0.5</sub>O<sub>3</sub>)-<i>x</i>Bi(Mg<sub>0.5</sub>Sn<sub>0.5</sub>)O<sub>3</sub>[(1–<i>x</i>) (0.9BT–0.1BMT)–<i>x</i>BMS] ceramic (<i>x</i> = 0.09). Excellent temperature stability with a variation of <i>η</i> less than 1.5% is also obtained in a wide temperature range from 30 to 150 °C. Temperature dependence of the dielectric permittivity of (1–<i>x</i>)(0.9BT–0.1BMT)-<i>x</i>BMS exhibits a typical dipolar-glass-like relaxor ferroelectric behavior. As a result, the ultra-high efficiency of the ceramic is attributed to the weak-coupling polar nanoregions (PNRs) which are analyzed using the Vogel-Fulcher formula and phenomenological statistical model. These results not only help to understand the origin of high efficiency in the (1–<i>x</i>)(0.9BT–0.1BMT)-<i>x</i>BMS system but also provide an effective approach to improve the comprehensive properties of other lead-free ceramic systems used in next-generation power capacitors.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 2\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-01-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14154-3\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14154-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Energy storage efficiency ≥ 99.5% achieved in weak-coupling ferroelectric relaxor BaTiO3–Bi(Mg0.5Ti0.5)O3 –Bi(Mg0.5Sn0.5)O3 system
High efficiency (η) is urgently desired for electronic energy storage devices. In this work, an extremely high energy storage efficiency (~ 99.5%) and energy storage density of 2.83 J/cm3 are achieved in lead-free relaxor ferroelectric (1–x)(0.9BaTiO3–0.1BiMg0.5Ti0.5O3)-xBi(Mg0.5Sn0.5)O3[(1–x) (0.9BT–0.1BMT)–xBMS] ceramic (x = 0.09). Excellent temperature stability with a variation of η less than 1.5% is also obtained in a wide temperature range from 30 to 150 °C. Temperature dependence of the dielectric permittivity of (1–x)(0.9BT–0.1BMT)-xBMS exhibits a typical dipolar-glass-like relaxor ferroelectric behavior. As a result, the ultra-high efficiency of the ceramic is attributed to the weak-coupling polar nanoregions (PNRs) which are analyzed using the Vogel-Fulcher formula and phenomenological statistical model. These results not only help to understand the origin of high efficiency in the (1–x)(0.9BT–0.1BMT)-xBMS system but also provide an effective approach to improve the comprehensive properties of other lead-free ceramic systems used in next-generation power capacitors.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.