{"title":"电阻式湿度传感器误差估计的一种非平凡方法及其与灵敏度的相关性","authors":"Alfa Sharma, Akash Sharma, Deepsikha Kar, Sushree Suhani Puhan, Parasharam M. Shirage","doi":"10.1007/s10854-024-14190-z","DOIUrl":null,"url":null,"abstract":"<div><p>The correspondence between sensitivity and adsorption/desorption-induced hysteresis in ZnSnO<sub>3</sub> resistive sensors is investigated. The ZnSnO<sub>3</sub> humidity sensor made at 100 °C present lower degree of error (1.21 ± 0.12%RH) associated with sensitivity of 0.11 ± 0.01 kΩ(%RH)<sup>−1</sup>, whereas the 500 °C annealed analogous showed an increased degree of measurement error value (1.48 ± 0.23% RH) along with sensitivity of 0.14 ± 0.02 kΩ(%RH)<sup>−1</sup> within the humidity range of 8–97% RH. A proportionate increase in sensitivity and measurement error is evident with increase in annealing temperature. The variance of principal components (PC1 and PC2) contributes 89.92% and 4.64% in the score plot confirms the migration of measurement errors from high to low RH level subject to annealing of sensing material according to principal component analysis (PCA). The trade-off relation between sensitivity and measurement error is observed for sensors with enactment of annealing emphasizes the prominence of revising the adsorption/desorption hysteresis as an crucial feature in development of metal oxide-based chemiresistive sensors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 2","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A non-trivial approach for estimation of error in resistive humidity sensors and its correlation with sensitivity\",\"authors\":\"Alfa Sharma, Akash Sharma, Deepsikha Kar, Sushree Suhani Puhan, Parasharam M. Shirage\",\"doi\":\"10.1007/s10854-024-14190-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The correspondence between sensitivity and adsorption/desorption-induced hysteresis in ZnSnO<sub>3</sub> resistive sensors is investigated. The ZnSnO<sub>3</sub> humidity sensor made at 100 °C present lower degree of error (1.21 ± 0.12%RH) associated with sensitivity of 0.11 ± 0.01 kΩ(%RH)<sup>−1</sup>, whereas the 500 °C annealed analogous showed an increased degree of measurement error value (1.48 ± 0.23% RH) along with sensitivity of 0.14 ± 0.02 kΩ(%RH)<sup>−1</sup> within the humidity range of 8–97% RH. A proportionate increase in sensitivity and measurement error is evident with increase in annealing temperature. The variance of principal components (PC1 and PC2) contributes 89.92% and 4.64% in the score plot confirms the migration of measurement errors from high to low RH level subject to annealing of sensing material according to principal component analysis (PCA). The trade-off relation between sensitivity and measurement error is observed for sensors with enactment of annealing emphasizes the prominence of revising the adsorption/desorption hysteresis as an crucial feature in development of metal oxide-based chemiresistive sensors.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 2\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-01-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14190-z\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14190-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A non-trivial approach for estimation of error in resistive humidity sensors and its correlation with sensitivity
The correspondence between sensitivity and adsorption/desorption-induced hysteresis in ZnSnO3 resistive sensors is investigated. The ZnSnO3 humidity sensor made at 100 °C present lower degree of error (1.21 ± 0.12%RH) associated with sensitivity of 0.11 ± 0.01 kΩ(%RH)−1, whereas the 500 °C annealed analogous showed an increased degree of measurement error value (1.48 ± 0.23% RH) along with sensitivity of 0.14 ± 0.02 kΩ(%RH)−1 within the humidity range of 8–97% RH. A proportionate increase in sensitivity and measurement error is evident with increase in annealing temperature. The variance of principal components (PC1 and PC2) contributes 89.92% and 4.64% in the score plot confirms the migration of measurement errors from high to low RH level subject to annealing of sensing material according to principal component analysis (PCA). The trade-off relation between sensitivity and measurement error is observed for sensors with enactment of annealing emphasizes the prominence of revising the adsorption/desorption hysteresis as an crucial feature in development of metal oxide-based chemiresistive sensors.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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