Co和Ti共掺赤铁矿(α-Fe2O3)体系的温度依赖性电学性质及导电机理研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-09 DOI:10.1007/s10854-024-14169-w
Vimal Narayan Sahoo, R. N. Bhowmik
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引用次数: 0

摘要

菱形结构赤铁矿(α-Fe2O3)体系在半导体工业中应用的实际限制是其导电性差(~ 10-11 S/m)。另一方面,赤铁矿是太阳能电池和储氢应用的潜在候选者。这激发了全世界对提高赤铁矿基材料导电性的兴趣。在赤铁矿结构中,二价Co和四价Ti离子的共掺杂显著提高了材料的电导率,电导率可达10-2 S/m量级,具有广泛的电子应用前景。共掺杂含量(x)的变化以及空气和真空热处理环境对导电性能的增强起着至关重要的作用。经机械合金化和1000℃热处理后,x = 0.2、0.4和0.6的α-Fe2−xTix/2Cox/2O3组成的材料稳定在菱面体相中。在313-723 K温度范围内测量了样品的电流-电压特性。本工作研究了Co和Ti共掺杂α-Fe2O3体系中温度和外加电压相关的电学性质的机理。实验结果可用于赤铁矿基金属氧化物在现代自旋电子器件、气体传感器、存储器件和热电器件中的应用。
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Study of temperature dependence electrical properties and conduction mechanisms of Co and Ti co-doped hematite (α-Fe2O3) system

The practical limitation of using rhombohedral-structured hematite (α-Fe2O3) system in semiconductor industry is its poor electrical conductivity (~ 10–11 S/m). On the other hand, hematite is a potential candidate for solar cell and hydrogen storage applications. This stimulates a worldwide interest for enhancing electrical conductivity in hematite based materials. The co-doping of divalent Co and tetravalent Ti ions in the hematite structure has remarkably enhanced electrical conductivity up to the order of 10–2 S/m and promised a wide scope of electronic applications of the materials. The variation of co-doping content (x) and heat treatment environment under air and vacuum played a crucial role for enhancement of electrical conductivity. The material of composition α-Fe2−xTix/2Cox/2O3 with x = 0.2, 0.4 and 0.6 has been stabilized in rhombohedral phase by mechanical alloying and post heat treatment at 1000 °C. The current–voltage characteristics of the samples have been measured in the temperature range of 313–723 K. This work has studied the mechanisms of temperature- and applied voltage- dependent electrical properties in Co and Ti co-doped α-Fe2O3 system. The experimental results of tuning electrical conductivity and electro-resistance can be useful for applications of hematite based metal oxides in modern spintronic devices, gas sensors, memory devices and thermoelectric devices.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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