{"title":"Mn/Fe比对Ni0.23Mn1.49-xFe0.039+xCo1.24O4体系中负温度系数热敏电阻电性能的影响","authors":"Yinghao Gao, Xiao Zhang, Sen Liang","doi":"10.1007/s10854-024-14160-5","DOIUrl":null,"url":null,"abstract":"<div><p>In thermistor materials, the material constant (B) and resistivity (<i>ρ</i>) of manganese-spinel NTC (Negative Temperature Coefficient) thermistors exhibit a clear correlation: changes in one parameter typically align with changes in the other, with few exceptions. This investigation centers on the system of Ni<sub>0.23</sub>Mn<sub>1.49-<i>x</i></sub>Fe<sub>0.039+<i>x</i></sub>Co<sub>1.24</sub>O<sub>4</sub> (<i>x</i> = 0, 0.2, 0.3, 0.33, 0.39, and 0.45) for which, the traditional solid sintering method was used to adjust the Mn/Fe ratio. This study delves into how these varying Mn/Fe ratios affect the electrical characteristics of the thermistor ceramics. As <i>x</i> increases—indicating higher Fe and lower Mn content—room temperature resistivity (<i>ρ</i><sub>25</sub>) gradually rises, while the material constant (<i>B</i><sub><i>25/50</i></sub>) declines, halting its decrease at <i>x</i> = 0.45. This trend is linked to a decrease in both carrier mobility and carrier concentration, explaining the inverse relationship between resistivity and material constant. This study offers some insights into regulating material constant and resistivity of NTC thermistors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 2","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Mn/Fe ratio on electrical properties of negative temperature coefficient thermistors in the Ni0.23Mn1.49-xFe0.039+xCo1.24O4 system\",\"authors\":\"Yinghao Gao, Xiao Zhang, Sen Liang\",\"doi\":\"10.1007/s10854-024-14160-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In thermistor materials, the material constant (B) and resistivity (<i>ρ</i>) of manganese-spinel NTC (Negative Temperature Coefficient) thermistors exhibit a clear correlation: changes in one parameter typically align with changes in the other, with few exceptions. This investigation centers on the system of Ni<sub>0.23</sub>Mn<sub>1.49-<i>x</i></sub>Fe<sub>0.039+<i>x</i></sub>Co<sub>1.24</sub>O<sub>4</sub> (<i>x</i> = 0, 0.2, 0.3, 0.33, 0.39, and 0.45) for which, the traditional solid sintering method was used to adjust the Mn/Fe ratio. This study delves into how these varying Mn/Fe ratios affect the electrical characteristics of the thermistor ceramics. As <i>x</i> increases—indicating higher Fe and lower Mn content—room temperature resistivity (<i>ρ</i><sub>25</sub>) gradually rises, while the material constant (<i>B</i><sub><i>25/50</i></sub>) declines, halting its decrease at <i>x</i> = 0.45. This trend is linked to a decrease in both carrier mobility and carrier concentration, explaining the inverse relationship between resistivity and material constant. This study offers some insights into regulating material constant and resistivity of NTC thermistors.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 2\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-01-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14160-5\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14160-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effect of Mn/Fe ratio on electrical properties of negative temperature coefficient thermistors in the Ni0.23Mn1.49-xFe0.039+xCo1.24O4 system
In thermistor materials, the material constant (B) and resistivity (ρ) of manganese-spinel NTC (Negative Temperature Coefficient) thermistors exhibit a clear correlation: changes in one parameter typically align with changes in the other, with few exceptions. This investigation centers on the system of Ni0.23Mn1.49-xFe0.039+xCo1.24O4 (x = 0, 0.2, 0.3, 0.33, 0.39, and 0.45) for which, the traditional solid sintering method was used to adjust the Mn/Fe ratio. This study delves into how these varying Mn/Fe ratios affect the electrical characteristics of the thermistor ceramics. As x increases—indicating higher Fe and lower Mn content—room temperature resistivity (ρ25) gradually rises, while the material constant (B25/50) declines, halting its decrease at x = 0.45. This trend is linked to a decrease in both carrier mobility and carrier concentration, explaining the inverse relationship between resistivity and material constant. This study offers some insights into regulating material constant and resistivity of NTC thermistors.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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