Eu3+掺杂BaCl2-BaO-TeO2玻璃的光致发光和闪烁特性

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-09 DOI:10.1007/s10854-024-14187-8
Tsubasa Suzuki, Shuntaro Muneta, Naoki Kawano, Daisuke Nakauchi, Kensei Ichiba, Kai Okazaki, Takumi Kato, Yuma Takebuchi, Fumito Kagaya, Kenji Shinozaki, Takayuki Yanagida
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引用次数: 0

摘要

制备了掺eu2o3的氯氧碲酸盐玻璃,并对其发光特性进行了研究。在530 nm光下,在577、592、612、652和701 nm处观察到Eu3+在4f能级之间跃迁产生的发光峰。在x射线照射下也观察到这些发光峰,在Eu2O3浓度为3.0%时达到最大强度。此外,在eu2o3掺杂的氯氧碲酸盐玻璃中检测到闪烁衰减时间约为0.64 ms。此外,3.0% eu2o3掺杂的氯氧碲酸盐玻璃的余辉水平最低(177 ppm),低于tl掺杂的CsI单晶。
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Photoluminescence and scintillation properties of Eu3+-doped BaCl2–BaO–TeO2 glasses

Eu2O3-doped oxychloride tellurite glasses were fabricated, and their luminescent characteristics were investigated for glass scintillators. Luminescent peaks originating from the transition between 4f energy levels of Eu3+ were observed at 577, 592, 612, 652, and 701 nm under 530 nm light. These luminescent peaks were also observed when irradiated with X-ray, and the maximum intensity was observed at a Eu2O3 concentration of 3.0%. Furthermore, scintillation decay times of about 0.64 ms were detected from the Eu2O3-doped oxychloride tellurite glasses. Moreover, the 3.0% Eu2O3-doped oxychloride tellurite glass exhibited the lowest afterglow level (177 ppm) that was lower than that of a Tl-doped CsI single crystal.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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