揭示了太阳能电池器件用CdTe薄膜厚度与CdCl2处理之间的复杂相互作用

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-13 DOI:10.1007/s10854-025-14211-5
Ipsita Jena, Udai P. Singh
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引用次数: 0

摘要

本文深入分析了碲化镉(CdTe)薄膜厚度与CdCl2处理之间复杂的相互作用。本研究利用策略设计的一组样品,这些样品在膜厚度和CdCl2处理方面各不相同。制备了四组器件结构样品:i)玻璃/FTO/CdS/CdTe, ii)玻璃/FTO/CdS/CdTe/CdCl2, iii)玻璃/FTO/CdS/ CdCl2/CdTe, iv)玻璃/FTO/ cd /CdTe/CdCl2/CdTe/CdCl2。首先,通过x射线衍射(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、霍尔效应测量和紫外可见光谱对CdTe薄膜进行了分析。XRD分析表明,CdTe薄膜呈多晶结构,具有明显的(111)取向峰。然而,样品的峰值强度随薄膜厚度和CdCl2在CdTe薄膜中的处理而变化。同样,从CdTe薄膜的SEM和AFM结果可以看出,薄膜厚度和CdCl2处理的表面形貌和粗糙度不同。电学和光学表征表明,样品的载流子浓度、电导率和带隙随薄膜厚度和CdCl2对CdTe薄膜的处理而变化。与其他结构相比,玻璃/FTO/CdS/CdTe/CdCl2/CdTe结构表现出令人印象深刻的结构、形态、拓扑和电学结果,并获得了近8%的效率。对这几种构型的J-V曲线进行了详细的研究。因此,这些结果表明薄膜厚度和CdCl2处理对提高CdTe太阳能电池的电势起着至关重要的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Unveiling the complex interplay between CdTe film thickness and CdCl2 treatment of CdTe films for Solar Cell device

The present work provides an in-depth analysis into the intricate interplay between the film thickness and CdCl2 treatment on the Cadmium Telluride (CdTe) films. This investigation utilized strategically designed set of samples that vary from each other in terms of film thickness and CdCl2 treatment. The four sets of samples having device structures: i) glass/FTO/CdS/CdTe, ii) glass/FTO/CdS/CdTe/CdCl2, iii) glass/FTO/CdS/CdTe/CdCl2/CdTe, and iv) glass/FTO/CdS/CdTe/CdCl2/CdTe/CdCl2 are fabricated. Initially, the CdTe films are analyzed by X-ray diffraction (XRD), Scanning electron microscope (SEM), Atomic force microscopy (AFM), Hall Effect measurements, and UV–Vis spectroscopy. XRD analysis revealed that CdTe films exhibited polycrystalline structure with a cubic phase displaying prominent (111) peak of orientation. However, peak intensities of samples varied with respect to film thickness and CdCl2 treatment in the CdTe films. Similarly, from the SEM and AFM results of CdTe films, it was noticed that the surface morphology and roughness differed with respect to film thickness and CdCl2 treatment. The electrical and optical characterizations illustrated that carrier concentration as well as conductivity and bandgap of samples varied with respect to film thickness and CdCl2 treatment of CdTe thin films. The glass/FTO/CdS/CdTe/CdCl2/CdTe configuration showed impressive structural, morphological, topological, and electrical results as compared to other configurations and a device of nearly 8% efficiency was obtained. J–V curves of this all the configurations have been studied in detail. Therefore, these results indicate that film thickness and CdCl2 treatment play a vital function in improving potential of CdTe solar cells.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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