基底温度对雾化喷雾热解法制备(222)取向CdIn2O4薄膜物理性能的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-12 DOI:10.1007/s10854-024-14200-0
B. Balayazhini, S. Sahul Hameed, J. Raj Mohamed
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引用次数: 0

摘要

在350 ~ 550℃,间隔50℃的条件下,采用雾化喷雾热解法在微玻璃基板上制备了氧化镉铟薄膜(CdIn2O4)。x射线衍射研究表明,薄膜具有立方结构和沿(222)面取向的多晶性质。在300 ~ 1100 nm波长范围内,所有薄膜均存在明显的多重干涉效应。这些薄膜具有很强的附着力、均匀性和光亮性。所得带隙值为2.71 ~ 3.37 eV,具有直接允许性质。观察了所有膜的乌尔巴赫能值和趋肤深度。用EDAX谱分析了元素的表面比。扫描电镜图像显示出花状颗粒。室温下的光致发光光谱解释了所有样品的四个发射波段,如紫外可见区490nm处的尖锐优势峰。分析了电学参数;在衬底温度为500℃时,薄膜的最小电阻率为0.51 × 102 Ω cm,迁移率为158 cm2/Vs。
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Impact of substrate temperature on the physical properties of (222) oriented CdIn2O4 thin films by nebulized spray pyrolysis technique

The cadmium indium oxide thin film (CdIn2O4) was formed onto a micro glass substrate using the nebulized spray pyrolysis process at substrate temperatures ranging from 350 to 550 °C with a 50 °C interval. The X-ray diffraction investigation revealed the polycrystalline nature of the films with a cubic structure and the preferred orientation along the (222) plane. The optical transmission and optical spectra were obtained using optical analysis and the multiple interference effect was significant in all of these films within the wavelength range of 300–1100 nm. These films were highly adhesive, homogeneous, and shining. Bandgap values ranging from 2.71 to 3.37 eV with direct allowed nature were obtained. The Urbach energy values and skin depth were observed for all the films. The surface ratio of the elements was analyzed using the EDAX spectrum. Scanning electron microscope images exhibited flower-shaped grains. Photoluminescence spectra at room temperature explain the four emission bands in all the samples, such as the sharp dominant peak at 490 nm in the UV–visible region. The electrical parameters were analyzed; the minimum resistivity was 0.51 × 102 Ω cm, and the mobility was 158 cm2/Vs for the film deposited at the substrate temperature of 500 °C.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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