退火温度对多功能赤铁矿(α-Fe2O3)薄膜气敏性能的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-22 DOI:10.1007/s10854-025-14244-w
Fatma Sarf, Irmak Karaduman Er, Emin Yakar, Selim Acar
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引用次数: 0

摘要

本研究采用直接溶液自旋镀膜法制备了α-Fe2O3赤铁矿,研究了在400、500和600℃退火2 h后,赤铁矿某些物理性能的变化。在400°C、500°C和600°C退火的传感器分别称为F400、F500和F600。制备样品的x射线衍射图证实了赤铁矿(α-Fe2O3)的菱形晶体结构的多晶性质。α-Fe2O3薄膜的表面粗糙度参数(SA-SQ)随着退火温度(57.47 ~ 68.08/13.63 ~ 17.13)的升高而急剧下降。直接光学带隙值由吸收测量估计,范围为2.77 ~ 2.52 eV。样品在室温下的电阻率随退火温度从400℃到600℃的升高而减小。F400、F500和F600的CO传感器在180℃时均有响应。计算出F400、F500和F600对1 ppm CO气体的响应分别为1.45%、8%和10%。润湿性测试表明,样品的水接触角(WCA)小于90°,表明样品具有亲水性,特别是在500°C退火时。
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The influence of annealing temperature on the gas sensing properties of multifunctional hematite (α-Fe2O3) films

In this study, hematite (α-Fe2O3) were prepared using direct solution spin coating and the changes of some physical properties with annealing temperature (400, 500 and 600 °C) for 2 h were investigated. The sensors annealed at 400 °C, 500 °C and 600°C are referred to as F400, F500 and F600 respectively. The X-ray diffraction patterns of the prepared samples confirm the polycrystalline nature of the rhombohedral crystal structure of hematite (α-Fe2O3). The surface roughness parameters (SA-SQ) of the α-Fe2O3 films decreased drastically with increasing annealing temperature from 400 to 600 °C (57.47–68.08/13.63–17.13). The direct optical band gap values were estimated from absorption measurements and ranged from 2.77 to 2.52 eV. The electrical resistivity measurement at room temperature of the samples decreased with increasing annealing temperature from 400 to 600 °C. The response of the CO sensor of F400, F500 and F600 was found at 180 °C. The response to 1 ppm CO gas was calculated to be 1.45%, 8% and 10% for F400, F500 and F600 respectively. The wettability test of the samples showed a water contact angle (WCA) of less than 90°, demonstrating the hydrophilic surface especially for the samples annealed at 500 °C.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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