基于纳米cmos器件的伪自旋mosfet的设计与性能

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479131

Y. Shuto, S. Yamamoto, H. Sukegawa, Z. Wen, R. Nakane, S. Mitani, Masaaki Tanaka, K. Inomata, S. Sugahara

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引用次数: 16

摘要

利用纳米cmos器件对伪自旋mosfet (ps - mosfet)的设计和性能进行了计算研究。通过将厂商生产的MOSFET与我们开发的自旋转移-转矩磁隧道结混合集成，实验证明了具有电流感应磁化开关的PS-MOSFET的工作。研究了ps - mosfet的非易失性SRAM和延迟触发器应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design and performance of pseudo-spin-MOSFETs using nano-CMOS devices

The design and performance of pseudo-spin-MOSFETs (PS-MOSFETs) using nano-CMOS devices were computationally investigated. The operations of a PS-MOSFET with current-induced magnetization switching were also experimentally demonstrated by the hybrid integration of a vendor-made MOSFET and our-developed spin-transfer-torque magnetic tunnel junction. The nonvolatile SRAM and delay flip-flop applications of PS-MOSFETs were also examined.

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2012 International Electron Devices Meeting

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