双栅MOSFET的三维解析亚阈值和量子力学分析

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979432

G. Pei, V. Narayanan, Zengtao Liu, E. Kan

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引用次数: 16

摘要

双栅MOSFET及其变化的标度研究是70 nm以下CMOS技术节点的关键。在这项工作中，我们提出了亚阈值区域的三维分析建模和通道耦合的分析量子力学考虑，可以促进器件设计和技术选择。分析模型得到了实验和分布式仿真的验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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3D analytical subthreshold and quantum mechanical analyses of double-gate MOSFET

Scaling studies on double-gate MOSFET and its variations are critical to CMOS technology node below 70 nm. In this work we present 3D analytical modeling in the subthreshold region and analytical quantum mechanical considerations of channel coupling that can facilitate device design and technology selection. The analytical models are corroborated with both experiments and distributed simulation.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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