室温下少数层石墨烯的自旋弛豫长度优化

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6478978

Yunfei Gao, Y. Kubo, Chia-Ching Lin, Zhihong Chen, J. Appenzeller

{"title":"室温下少数层石墨烯的自旋弛豫长度优化","authors":"Yunfei Gao, Y. Kubo, Chia-Ching Lin, Zhihong Chen, J. Appenzeller","doi":"10.1109/IEDM.2012.6478978","DOIUrl":null,"url":null,"abstract":"For the first time, a spin relaxation length (λS) of ~5μm is measured in graphene at room temperature - a critical accomplishment considering the recent interest in spin based devices for low power applications. The key to this demonstration lies in the use of few layer graphene. In fact, optimum performance is demonstrated here for ~7-layer graphene. Moreover, a 4x increase of λS is observed at 77K.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"18 1","pages":"4.4.1-4.4.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Optimized spin relaxation length in few layer graphene at room temperature\",\"authors\":\"Yunfei Gao, Y. Kubo, Chia-Ching Lin, Zhihong Chen, J. Appenzeller\",\"doi\":\"10.1109/IEDM.2012.6478978\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, a spin relaxation length (λS) of ~5μm is measured in graphene at room temperature - a critical accomplishment considering the recent interest in spin based devices for low power applications. The key to this demonstration lies in the use of few layer graphene. In fact, optimum performance is demonstrated here for ~7-layer graphene. Moreover, a 4x increase of λS is observed at 77K.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":\"18 1\",\"pages\":\"4.4.1-4.4.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6478978\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6478978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

首次在室温下在石墨烯中测量到~5μm的自旋弛豫长度(λS) -考虑到最近对低功耗应用的自旋基器件的兴趣，这是一项关键的成就。这次演示的关键在于使用了很少的石墨烯层。事实上，这里证明了~7层石墨烯的最佳性能。此外，在77K时观察到λS增加了4倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Optimized spin relaxation length in few layer graphene at room temperature

For the first time, a spin relaxation length (λS) of ~5μm is measured in graphene at room temperature - a critical accomplishment considering the recent interest in spin based devices for low power applications. The key to this demonstration lies in the use of few layer graphene. In fact, optimum performance is demonstrated here for ~7-layer graphene. Moreover, a 4x increase of λS is observed at 77K.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 International Electron Devices Meeting

自引率

0.00%

发文量