C. Chen, T. Lin, J. Jung, N. Yabuoshi, Y. Sasaki, K. Komori, H. Shih, Chao Min Liao, M. Funabashi, N. Suzuki, Y. Ishii, T. Uchino, K. Nemoto, H. Yamamoto, S. Nishihara, S. Sasabe, A. Koike, S. Ikeda, J. Tsao
{"title":"300毫米单晶圆制造技术的创新","authors":"C. Chen, T. Lin, J. Jung, N. Yabuoshi, Y. Sasaki, K. Komori, H. Shih, Chao Min Liao, M. Funabashi, N. Suzuki, Y. Ishii, T. Uchino, K. Nemoto, H. Yamamoto, S. Nishihara, S. Sasabe, A. Koike, S. Ikeda, J. Tsao","doi":"10.1109/IEDM.2001.979578","DOIUrl":null,"url":null,"abstract":"In this paper, we discuss a new technology implemented with all single wafer process for 300 mm fab. Very aggressive cycle time reduction with high yield has been demonstrated (one-third cycle time of that of conventional fab) in single polysilicon triple metal 8M/4M low power SRAM. High performance devices with excellent reliability are also achieved.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"52 1","pages":"28.3.1-28.3.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Innovation of 300 mm fab manufacturing with single wafer technology\",\"authors\":\"C. Chen, T. Lin, J. Jung, N. Yabuoshi, Y. Sasaki, K. Komori, H. Shih, Chao Min Liao, M. Funabashi, N. Suzuki, Y. Ishii, T. Uchino, K. Nemoto, H. Yamamoto, S. Nishihara, S. Sasabe, A. Koike, S. Ikeda, J. Tsao\",\"doi\":\"10.1109/IEDM.2001.979578\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we discuss a new technology implemented with all single wafer process for 300 mm fab. Very aggressive cycle time reduction with high yield has been demonstrated (one-third cycle time of that of conventional fab) in single polysilicon triple metal 8M/4M low power SRAM. High performance devices with excellent reliability are also achieved.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"52 1\",\"pages\":\"28.3.1-28.3.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979578\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979578","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Innovation of 300 mm fab manufacturing with single wafer technology
In this paper, we discuss a new technology implemented with all single wafer process for 300 mm fab. Very aggressive cycle time reduction with high yield has been demonstrated (one-third cycle time of that of conventional fab) in single polysilicon triple metal 8M/4M low power SRAM. High performance devices with excellent reliability are also achieved.
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