pmosfet中空穴捕获频率依赖性的微观根源

T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer
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引用次数: 27

摘要

详细了解pmosfet中空穴捕获背后的物理机制对于许多可靠性问题至关重要,包括负偏置温度不稳定性(NBTI)、热载流子退化、随机电报和1/f噪声。为了更好地理解有争议的NBTI频率依赖性,我们通过将时间依赖缺陷谱(TDDS)扩展到交流情况,研究了空穴捕获对单个缺陷的频率依赖性。通常,空穴捕获是用有效捕获和发射时间常数τc和τβ来解释的一阶过程。然而,我们的实验数据清楚地表明,在现代数字应用通常运行的更高频率下,这种假设是不正确的。特别是,在这些有效捕获时间中可见的频率依赖性清楚地证实了空穴捕获必须通过中间亚稳态发生。有趣的是,我们之前引入的亚稳态解释DC-TDDS数据也充分解释了AC-TDDS的情况。
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On the microscopic origin of the frequency dependence of hole trapping in pMOSFETs
A detailed understanding of the physical mechanisms behind hole capture in pMOSFETs is essential for a number of reliability issues, including the negative bias temperature instability (NBTI), hot carrier degradation, random telegraph and 1/f noise. In order to better understand the controversial frequency dependence of NBTI, we study the frequency dependence of hole capture on individual defects by extending the time-dependent defect spectroscopy (TDDS) to the AC case. Conventionally, hole capture is explained by a first-order process using effective capture and emission time constants, τc and τβ. Our experimental data clearly reveals, however, that this assumption is incorrect under higher frequencies where modern digital applications typically operate. In particular, the frequency dependence visible in these effective capture times clearly confirms that hole capture must occur via an intermediate metastable state. Interestingly, the metastable state we have previously introduced to explain the DC-TDDS data also fully explains the AC-TDDS case.
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