pmosfet中空穴捕获频率依赖性的微观根源

T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer
{"title":"pmosfet中空穴捕获频率依赖性的微观根源","authors":"T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer","doi":"10.1109/IEDM.2012.6479076","DOIUrl":null,"url":null,"abstract":"A detailed understanding of the physical mechanisms behind hole capture in pMOSFETs is essential for a number of reliability issues, including the negative bias temperature instability (NBTI), hot carrier degradation, random telegraph and 1/f noise. In order to better understand the controversial frequency dependence of NBTI, we study the frequency dependence of hole capture on individual defects by extending the time-dependent defect spectroscopy (TDDS) to the AC case. Conventionally, hole capture is explained by a first-order process using effective capture and emission time constants, τc and τβ. Our experimental data clearly reveals, however, that this assumption is incorrect under higher frequencies where modern digital applications typically operate. In particular, the frequency dependence visible in these effective capture times clearly confirms that hole capture must occur via an intermediate metastable state. Interestingly, the metastable state we have previously introduced to explain the DC-TDDS data also fully explains the AC-TDDS case.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"On the microscopic origin of the frequency dependence of hole trapping in pMOSFETs\",\"authors\":\"T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer\",\"doi\":\"10.1109/IEDM.2012.6479076\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A detailed understanding of the physical mechanisms behind hole capture in pMOSFETs is essential for a number of reliability issues, including the negative bias temperature instability (NBTI), hot carrier degradation, random telegraph and 1/f noise. In order to better understand the controversial frequency dependence of NBTI, we study the frequency dependence of hole capture on individual defects by extending the time-dependent defect spectroscopy (TDDS) to the AC case. Conventionally, hole capture is explained by a first-order process using effective capture and emission time constants, τc and τβ. Our experimental data clearly reveals, however, that this assumption is incorrect under higher frequencies where modern digital applications typically operate. In particular, the frequency dependence visible in these effective capture times clearly confirms that hole capture must occur via an intermediate metastable state. Interestingly, the metastable state we have previously introduced to explain the DC-TDDS data also fully explains the AC-TDDS case.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479076\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27

摘要

详细了解pmosfet中空穴捕获背后的物理机制对于许多可靠性问题至关重要,包括负偏置温度不稳定性(NBTI)、热载流子退化、随机电报和1/f噪声。为了更好地理解有争议的NBTI频率依赖性,我们通过将时间依赖缺陷谱(TDDS)扩展到交流情况,研究了空穴捕获对单个缺陷的频率依赖性。通常,空穴捕获是用有效捕获和发射时间常数τc和τβ来解释的一阶过程。然而,我们的实验数据清楚地表明,在现代数字应用通常运行的更高频率下,这种假设是不正确的。特别是,在这些有效捕获时间中可见的频率依赖性清楚地证实了空穴捕获必须通过中间亚稳态发生。有趣的是,我们之前引入的亚稳态解释DC-TDDS数据也充分解释了AC-TDDS的情况。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
On the microscopic origin of the frequency dependence of hole trapping in pMOSFETs
A detailed understanding of the physical mechanisms behind hole capture in pMOSFETs is essential for a number of reliability issues, including the negative bias temperature instability (NBTI), hot carrier degradation, random telegraph and 1/f noise. In order to better understand the controversial frequency dependence of NBTI, we study the frequency dependence of hole capture on individual defects by extending the time-dependent defect spectroscopy (TDDS) to the AC case. Conventionally, hole capture is explained by a first-order process using effective capture and emission time constants, τc and τβ. Our experimental data clearly reveals, however, that this assumption is incorrect under higher frequencies where modern digital applications typically operate. In particular, the frequency dependence visible in these effective capture times clearly confirms that hole capture must occur via an intermediate metastable state. Interestingly, the metastable state we have previously introduced to explain the DC-TDDS data also fully explains the AC-TDDS case.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
On the degradation of field-plate assisted RESURF power devices Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires Design and performance of pseudo-spin-MOSFETs using nano-CMOS devices MOSFET performance and scalability enhancement by insertion of oxygen layers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1