早期石墨烯在铜表面生长的观察

K. Celebi, M. Cole, K. Teo, H. Park
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引用次数: 35

摘要

在石墨烯生长的早期阶段,我们采用乙烯基CVD方法进行了观察,该方法能够在低至800℃的温度下合成铜箔催化的单层石墨烯。表面催化的光谱监测表明,石墨烯晶体从密集分布的成核点演变而来,这些成核点相互连接,形成覆盖整个表面的大晶体。石墨烯初生晶体内部出现二次成核现象。铜催化乙烯基石墨烯合成的有效活化能为2.46 eV,该值表明乙烯的表面脱氢或石墨烯的晶格整合可能是非均相催化的速率决定步骤。
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Observations of Early Stage Graphene Growth on Copper
We present our observations made during the early stages of graphene growth employing an ethylene-based CVD method capable of synthesizing copper-foil-catalyzed monolayer graphene at temperatures as low as 800 ◦ C. Spectroscopic monitoring of surface catalysis showed that graphene crystals evolve from densely distributed nucleation points that interconnect to form large crystals covering the entire surface. Secondary nucleation was observed inside the primary graphene crystals. An effective activation energy for copper-catalyzed ethylene-based graphene synthesis was determined to be 2.46 eV, a value that suggests surface dehydrogenation of ethylene or lattice integration of graphene as the possible rate-determining step in the heterogeneous catalysis.
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来源期刊
Electrochemical and Solid State Letters
Electrochemical and Solid State Letters 工程技术-材料科学:综合
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审稿时长
1.9 months
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