{"title":"近理想亚阈值摆幅的低热预算非晶氧化铟钨纳米片无结晶体管","authors":"P. Kuo, Chien-Min Chang, Po-Tsun Liu","doi":"10.1109/VLSIT.2018.8510684","DOIUrl":null,"url":null,"abstract":"Amorphous indium tungsten oxide (a-IWO) nano-sheet (NS) junctionless (JL) transistors (a-IWO NS-JLTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO NS-JLTs with low operation voltages exhibit good electrical characteristics: near ideal peak subthreshold swing (S.S.) ~ 63mV/dec., high field-effect mobility (μFE) ~ 25.3 cm2/V-s. The novel a-IWO NS-JLTs with low temperature processes are promising candidates for monolithic three-dimensional integrated circuits (3-D ICs), vertical stacked (VS) hybrid CMOS technology, and large-scale integration (LSI) applications in the future.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"31 1","pages":"21-22"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Low Thermal Budget Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Near Ideal Subthreshold Swing\",\"authors\":\"P. Kuo, Chien-Min Chang, Po-Tsun Liu\",\"doi\":\"10.1109/VLSIT.2018.8510684\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Amorphous indium tungsten oxide (a-IWO) nano-sheet (NS) junctionless (JL) transistors (a-IWO NS-JLTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO NS-JLTs with low operation voltages exhibit good electrical characteristics: near ideal peak subthreshold swing (S.S.) ~ 63mV/dec., high field-effect mobility (μFE) ~ 25.3 cm2/V-s. The novel a-IWO NS-JLTs with low temperature processes are promising candidates for monolithic three-dimensional integrated circuits (3-D ICs), vertical stacked (VS) hybrid CMOS technology, and large-scale integration (LSI) applications in the future.\",\"PeriodicalId\":6561,\"journal\":{\"name\":\"2018 IEEE Symposium on VLSI Technology\",\"volume\":\"31 1\",\"pages\":\"21-22\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2018.8510684\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Thermal Budget Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Near Ideal Subthreshold Swing
Amorphous indium tungsten oxide (a-IWO) nano-sheet (NS) junctionless (JL) transistors (a-IWO NS-JLTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO NS-JLTs with low operation voltages exhibit good electrical characteristics: near ideal peak subthreshold swing (S.S.) ~ 63mV/dec., high field-effect mobility (μFE) ~ 25.3 cm2/V-s. The novel a-IWO NS-JLTs with low temperature processes are promising candidates for monolithic three-dimensional integrated circuits (3-D ICs), vertical stacked (VS) hybrid CMOS technology, and large-scale integration (LSI) applications in the future.