Cu(Mn)合金种子互连的电迁移可扩展性及其基本原理的理解

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479161

T. Nogami, C. Penny, A. Madan, C. Parks, J. Li, P. Flaitz, A. Uedono, S. Chiang, M. He, A. Simon, T. Bolom, T. Ryan, F. Ito, C. Christiansen, L. Tai, C. Hu, H. Kim, X. Zhang, K. Tanwar, S. Choi, F. Baumann, R. Davis, J. Kelly, R. Murphy, S. Molis, J. Rowland, P. Dehaven, D. Canaperi, T. Spooner, D. Edelstein

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引用次数: 11

摘要

Cu(Mn)合金种子BEOL研究揭示了Mn偏析和EM增强的基本见解。我们在Cu/SiCNH帽界面的MnOx层下发现了金属态的富mn Cu层，并将该金属层与额外的EM增强联系起来。羰基CVD-Co衬里膜消耗了Mn，减少了其偏析和EM效益，这表明无o的Co衬里膜对于cu合金种子的扩展是有战略意义的。

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Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals

Cu(Mn) alloy seed BEOL studies revealed fundamental insights into Mn segregation and EM enhancement. We found a metallic-state Mn-rich Cu layer under the MnOx layer at the Cu/SiCNH cap interface, and correlated this metallic layer with additional EM enhancement. A carbonyl-based CVD-Co liner film consumed Mn, reducing its segregation and EM benefit, suggesting O-free Co liner films are strategic for Cu-alloy seed extendibility.

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2012 International Electron Devices Meeting

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