{"title":"用于2 GHz以上高功率放大器应用的沟槽下沉型LDMOSFET (TS-LDMOS)结构","authors":"C. Kim, Joung-Woo Park, Hyun-Kyu Yu","doi":"10.1109/IEDM.2001.979655","DOIUrl":null,"url":null,"abstract":"New trenched sinker LDMOSFET structure is proposed for the application of high power RF amplifier. By adopting low temperature deep trench technology, the sinker area can be shrunk down more than 70% compared with the conventional diffusion type. The RF performance of proposed device with channel width of 5 mm showed a small signal gain of 19.3 dB at 2 GHz and 14.8 dB at 3 GHz, and maximum peak power of 30 dBm at V/sub DD/ of 26 V. Furthermore, the trench sinker (or guard), that is applied to suppress the coupling between inductors, also showed a excellent blocking performance at frequency range from 0.5 GHz to 20 GHz.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"25 1","pages":"40.2.1-40.2.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz\",\"authors\":\"C. Kim, Joung-Woo Park, Hyun-Kyu Yu\",\"doi\":\"10.1109/IEDM.2001.979655\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New trenched sinker LDMOSFET structure is proposed for the application of high power RF amplifier. By adopting low temperature deep trench technology, the sinker area can be shrunk down more than 70% compared with the conventional diffusion type. The RF performance of proposed device with channel width of 5 mm showed a small signal gain of 19.3 dB at 2 GHz and 14.8 dB at 3 GHz, and maximum peak power of 30 dBm at V/sub DD/ of 26 V. Furthermore, the trench sinker (or guard), that is applied to suppress the coupling between inductors, also showed a excellent blocking performance at frequency range from 0.5 GHz to 20 GHz.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"25 1\",\"pages\":\"40.2.1-40.2.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979655\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979655","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz
New trenched sinker LDMOSFET structure is proposed for the application of high power RF amplifier. By adopting low temperature deep trench technology, the sinker area can be shrunk down more than 70% compared with the conventional diffusion type. The RF performance of proposed device with channel width of 5 mm showed a small signal gain of 19.3 dB at 2 GHz and 14.8 dB at 3 GHz, and maximum peak power of 30 dBm at V/sub DD/ of 26 V. Furthermore, the trench sinker (or guard), that is applied to suppress the coupling between inductors, also showed a excellent blocking performance at frequency range from 0.5 GHz to 20 GHz.
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