集成电压调节器用嵌入式高功率密度无源的3D封装

Teng Sun, R. Spurney, A. Watanabe, P. R. Pulugurtha, H. Sharma, R. Tummala, Furukawa Yoshihiro
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引用次数: 3

摘要

高集成3D稳压器(ivr)是为AI计算和服务器等新兴应用开发的高功率应用。通过这种3D工艺集成,电感器和电容器等无源元件嵌入基板并靠近芯片放置,从而实现短功率输送网络(pnd)和高功率效率。高密度钽电容器与高密度磁芯电感集成,实现模块厚度约0.7 mm的ivr。通过采用高磁导率的磁性材料作为磁芯,与空芯电感器相比,电感率提高了20倍。高电感使电感器可以设计出更少的绕组,从而使元件电阻低至5 mΩ。所述集成组件具有与电解镀工艺兼容的封装兼容端子。端子允许它们与低电阻过孔连接,以进一步减少寄生损耗并提高功率效率。短pdn和低电阻互连和低电阻组件使演示的ivr非常适合具有高效率低阻抗电力输送网络的高功率密度计算应用。
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3D Packaging with Embedded High-Power-Density Passives for Integrated Voltage Regulators
Highly-integrated 3D voltage regulators (IVRs) for high-power applications are developed for emerging applications such as AI computing and server. With this 3D process integration, passive components such as inductors and capacitors are embedded into substrates and placed close to the chips, resulting in short power delivery networks (PNDs) and high power efficiency. High-density tantalum capacitors are integrated with high-density magnetic-core inductors to realize IVRs with module thickness around 0.7 mm. By incorporating high-permeability magnetic materials as the cores, the inductors achieved 20X improvement in inductance as compared to air-core inductors. The high inductance allows inductors to be designed with less number of windings, resulting in low component resistance of 5 mΩ. The integrated components have package-compatible terminals that are compatible with electrolytic plating process. The terminals allow them to be connected with low-resistance vias to further reduce parasitic losses and improve the power efficiency. Short PDNs and low-resistance interconnections and low-resistance components make the demonstrated IVRs ideal for high-power density computing applications with high efficiency low-impedance power delivery networks.
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