纳秒激光退火提高先进finfet的BEOL性能

2018 IEEE Symposium on VLSI Technology Pub Date : 2018-06-01 DOI:10.1109/VLSIT.2018.8510651

Rinus Lee, N. Petrov, J. Kassim, M. Gribelyuk, J. Yang, L. Cao, K. Yeap, T. Shen, ATIQAH NAJWA ZAINUDDIN, A. Chandrashekar, S. Ray, E. Ramanathan, A. S. Mahalingam, R. Chaudhuri, J. Mody, D. Damjanovic, Z. Sun, R. Sporer, T. J. Tang, H. Liu, J. Liu, B. Krishnan

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引用次数: 8

摘要

利用14nm FinFET技术首次证明了纳秒激光诱导Cu互连中的晶粒生长。我们实现了Cu互连电阻降低35%，RC提高15%，IDsat增益2 - 5%。此外，在不影响ULK机械完整性的情况下，电介质VBD和Cu EM性能的改善提高了可靠性。我们的研究结果展示了扩展Cu互连以提高14nm finfet及其他性能的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nanosecond Laser Anneal for BEOL Performance Boost in Advanced FinFETs

Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu interconnect resistance, which delivers a 15% improvement in RC and a gain of 2 – 5% in IDsat. Additionally, reliability was enhanced with an improvement in dielectric VBD and Cu EM performance without impacting the ULK mechanical integrity. Our results demonstrate a path to extending Cu interconnects for performance boost in 14nm FinFETs and beyond.

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2018 IEEE Symposium on VLSI Technology

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