LIPS-II GaAs在轨5年后的状态

J.D. Scorfield
{"title":"LIPS-II GaAs在轨5年后的状态","authors":"J.D. Scorfield","doi":"10.1109/PVSC.1988.105859","DOIUrl":null,"url":null,"abstract":"Updated and reduced data through day 1995 as well as conclusions about the performance and behavior of the GaAs panel are presented. The performance of the GaAs panel, after initial severe degradation, is encouraging. The results support other data indicating that GaAs solar cells are a viable space power system component. Taking into account recent advances such as Ge substrate use, multibandgap efforts, and significant performance gains, the author concludes that GaAs cells are ready to become the next generation of photovoltaic cells supplying space power for military and commercial missions.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"34 1","pages":"1024-1026 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Status of LIPS-II GaAs after five years in orbit\",\"authors\":\"J.D. Scorfield\",\"doi\":\"10.1109/PVSC.1988.105859\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Updated and reduced data through day 1995 as well as conclusions about the performance and behavior of the GaAs panel are presented. The performance of the GaAs panel, after initial severe degradation, is encouraging. The results support other data indicating that GaAs solar cells are a viable space power system component. Taking into account recent advances such as Ge substrate use, multibandgap efforts, and significant performance gains, the author concludes that GaAs cells are ready to become the next generation of photovoltaic cells supplying space power for military and commercial missions.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"34 1\",\"pages\":\"1024-1026 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105859\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105859","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了截至1995年第一天的最新和减少的数据以及关于GaAs面板的性能和行为的结论。经过最初的严重退化,GaAs面板的性能是令人鼓舞的。结果支持了其他数据,表明砷化镓太阳能电池是一种可行的空间电力系统组件。考虑到最近的进展,如Ge衬底的使用,多带隙的努力,以及显著的性能提升,作者得出结论,GaAs电池已经准备好成为下一代光伏电池,为军事和商业任务提供空间电力
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Status of LIPS-II GaAs after five years in orbit
Updated and reduced data through day 1995 as well as conclusions about the performance and behavior of the GaAs panel are presented. The performance of the GaAs panel, after initial severe degradation, is encouraging. The results support other data indicating that GaAs solar cells are a viable space power system component. Taking into account recent advances such as Ge substrate use, multibandgap efforts, and significant performance gains, the author concludes that GaAs cells are ready to become the next generation of photovoltaic cells supplying space power for military and commercial missions.<>
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