{"title":"基于多晶片OMVPE反应器的高效砷化镓太阳能电池","authors":"K. Bertness, M. Ristow, H. C. Hamaker","doi":"10.1109/PVSC.1988.105807","DOIUrl":null,"url":null,"abstract":"A p/n GaAs solar cell with 24.0% efficiency under 1-sun global illumination (AM1.5, 1000 W/m/sup 2/) has been grown in a multiwafer organometallic vapor-phase epitaxy (OMVPE) reactor. This reactor has demonstrated good uniformity both from run to run and within a single run as part of a pilot line for the batch production of high-efficiency GaAs cells. The 24% efficiency value represents the highest efficiency reported to date for any solar cell under these conditions. The improved performance of these cells is believed to be mostly due to careful control of the emitter doping.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"144 1","pages":"769-770 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"High-efficiency GaAs solar cells from a multiwafer OMVPE reactor\",\"authors\":\"K. Bertness, M. Ristow, H. C. Hamaker\",\"doi\":\"10.1109/PVSC.1988.105807\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A p/n GaAs solar cell with 24.0% efficiency under 1-sun global illumination (AM1.5, 1000 W/m/sup 2/) has been grown in a multiwafer organometallic vapor-phase epitaxy (OMVPE) reactor. This reactor has demonstrated good uniformity both from run to run and within a single run as part of a pilot line for the batch production of high-efficiency GaAs cells. The 24% efficiency value represents the highest efficiency reported to date for any solar cell under these conditions. The improved performance of these cells is believed to be mostly due to careful control of the emitter doping.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"144 1\",\"pages\":\"769-770 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105807\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105807","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-efficiency GaAs solar cells from a multiwafer OMVPE reactor
A p/n GaAs solar cell with 24.0% efficiency under 1-sun global illumination (AM1.5, 1000 W/m/sup 2/) has been grown in a multiwafer organometallic vapor-phase epitaxy (OMVPE) reactor. This reactor has demonstrated good uniformity both from run to run and within a single run as part of a pilot line for the batch production of high-efficiency GaAs cells. The 24% efficiency value represents the highest efficiency reported to date for any solar cell under these conditions. The improved performance of these cells is believed to be mostly due to careful control of the emitter doping.<>
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