22纳米FD-SOI嵌入式MRAM具有完全焊料回流兼容性和增强的磁抗扰度

2018 IEEE Symposium on VLSI Technology Pub Date : 2018-06-01 DOI:10.1109/VLSIT.2018.8510655

K. Lee, K. Yamane, S. Noh, V. B. Naik, H. Yang, S. Jang, J. Kwon, B. Behin-Aein, R. Chao, J. H. Lim, K. S., K. W. Gan, D. Zeng, N. Thiyagarajah, L. C. Goh, B. Liu, E. Toh, B. Jung, T. L. Wee, T. Ling, T. Chan, N. Chung, J. W. Ting, S. Lakshmipathi, J. Son, J. Hwang, L. Zhang, R. Low, R. Krishnan, T. Kitamura, Y. You, C. Seet, H. Cong, D. Shum, J. Wong, S. Woo, J. Lam, E. Quek, A. See, S. Siah

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引用次数: 22

摘要

我们展示了一个全功能嵌入式MRAM (eMRAM)宏集成到一个22纳米FD-SOI CMOS平台。该宏与eflash风格的MTJ薄膜堆栈相结合，在5次焊料回流后，中芯误码率(BER) < 1ppm。它还符合汽车一级数据保留要求，并在25°C下暴露1小时后显示出1.4 kOe (BER标准= 1 ppm)的固有待机磁抗扰度。结果表明，eMRAM能够在22纳米或更高的范围内服务于广泛的eFlash应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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22-nm FD-SOI Embedded MRAM with Full Solder Reflow Compatibility and Enhanced Magnetic Immunity

We demonstrate a fully functional embedded MRAM (eMRAM) macro integrated into a 22-nm FD-SOI CMOS platform. This macro combined with eFlash-flavor MTJ film stacks shows median-die bit error rate (BER) < 1 ppm after 5× solder reflows. It also meets the automotive grade-1 data retention requirement and shows intrinsic stand-by magnetic immunity of 1.4 kOe (BER criteria = 1 ppm) after 1-hr exposure at 25 °C. The results reveal that eMRAM is capable of serving a broad spectrum of eFlash applications at 22 nm or beyond.

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2018 IEEE Symposium on VLSI Technology

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