带有3D集成无源器件的超薄类qfn 3D封装

A. Ghannam, Niek van Haare, Julian Bravin, Elisabeth Brandl, Birgit Brandstätter, H. Klingler, B. Auer, P. Meunier, S. Kersjes
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引用次数: 3

摘要

在这项工作中,开发了一种新的晶圆级3D封装技术,可以集成超薄qfn(四平面无引线)3D封装,其目标是有效的电学和热性能,厚度小于200微米。所提出的架构允许堆叠交错的模具进行3D互连,并在封装内集成紧凑、高性能的3D集成无源器件,以增加功能和电气性能。开发的技术包括使用临时载体,Cu 2D-RDL(再分配层),精确的薄模具拾取和放置,3D- rdl和覆盖成型工艺来集成类似qfn的3D封装。芯片和封装I/O之间的互连使用保形3D-RDL实现,因此没有线键,倒装芯片或TSV。
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Ultra-Thin QFN-Like 3D Package with 3D Integrated Passive Devices
In this work, a new wafer-level 3D packaging technology is developed to enable integration of an ultra-thin QFN-like (quad-flat no-leads) 3D package that targets both effective electrical and thermal properties and a thickness smaller than 200 µm. The proposed architecture allows 3D interconnection of stacked staggered dies and integration of compact, high-performance 3D integrated passive devices inside the package for added functionality and electrical performance. The developed technology consists of using debonding from a temporary carrier, Cu 2D-RDL (Redistribution Layer), accurate thin die pick & place, 3D-RDL and overmolding processes to integrate a QFN-like 3D package. Interconnection between die and package I/O is achieved using conformal 3D-RDL, thus without wire-bond, flip-chip or TSV.
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