{"title":"覆盖计量的下一代光刻在CMS","authors":"Y. Ku, H. Tai, Chia-Teng Chang","doi":"10.1109/NANO.2007.4601351","DOIUrl":null,"url":null,"abstract":"The center for measurement standards (CMS) has a research program in optical overlay metrology. The main goal of this work is to improve overlay measurement accuracy. Two main threads are developed to the work - novel in-chip overlay target design, and best algorithm. The former is hoped to prove a capability for measuring overlay error inside the active area of product devices. The later is for extracting the most from image detail.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"187 1","pages":"998-1001"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Overlay metrology for next generation lithography at CMS\",\"authors\":\"Y. Ku, H. Tai, Chia-Teng Chang\",\"doi\":\"10.1109/NANO.2007.4601351\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The center for measurement standards (CMS) has a research program in optical overlay metrology. The main goal of this work is to improve overlay measurement accuracy. Two main threads are developed to the work - novel in-chip overlay target design, and best algorithm. The former is hoped to prove a capability for measuring overlay error inside the active area of product devices. The later is for extracting the most from image detail.\",\"PeriodicalId\":6415,\"journal\":{\"name\":\"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)\",\"volume\":\"187 1\",\"pages\":\"998-1001\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2007.4601351\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2007.4601351","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Overlay metrology for next generation lithography at CMS
The center for measurement standards (CMS) has a research program in optical overlay metrology. The main goal of this work is to improve overlay measurement accuracy. Two main threads are developed to the work - novel in-chip overlay target design, and best algorithm. The former is hoped to prove a capability for measuring overlay error inside the active area of product devices. The later is for extracting the most from image detail.
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