Chung-Yuan Chen, Hsiu-Li Hsieh, Chia-Hsien Lin, S. Liao, T. Sun, C. Ching, Po-Liang Liu
{"title":"带信号接口的扩展栅氢离子敏感场效应晶体管","authors":"Chung-Yuan Chen, Hsiu-Li Hsieh, Chia-Hsien Lin, S. Liao, T. Sun, C. Ching, Po-Liang Liu","doi":"10.1109/BMEI.2009.5305321","DOIUrl":null,"url":null,"abstract":"H + -ion concentration into digital form. This chip, fabricated in a 0.18-um CMOS 1P6M process, operated at a 1.8V supply voltage and normal sampling rate of 6.25MHz. The circuit (without pad) occupied an area of 0.66mm × 0.43mm. The experimental data showed that this structure has a linear pH response about 97 digital counts/pH in the ion concentration range between pH2 and pH12, and the gain errors within the H + -ion concentrations are less than 3%. The minimum detectable pH value can reach as small as ±0.25pH.","PeriodicalId":6389,"journal":{"name":"2009 2nd International Conference on Biomedical Engineering and Informatics","volume":"108 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Extended Gate H+-Ion Sensitive Field Effect Transistor with Signal Interface\",\"authors\":\"Chung-Yuan Chen, Hsiu-Li Hsieh, Chia-Hsien Lin, S. Liao, T. Sun, C. Ching, Po-Liang Liu\",\"doi\":\"10.1109/BMEI.2009.5305321\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"H + -ion concentration into digital form. This chip, fabricated in a 0.18-um CMOS 1P6M process, operated at a 1.8V supply voltage and normal sampling rate of 6.25MHz. The circuit (without pad) occupied an area of 0.66mm × 0.43mm. The experimental data showed that this structure has a linear pH response about 97 digital counts/pH in the ion concentration range between pH2 and pH12, and the gain errors within the H + -ion concentrations are less than 3%. The minimum detectable pH value can reach as small as ±0.25pH.\",\"PeriodicalId\":6389,\"journal\":{\"name\":\"2009 2nd International Conference on Biomedical Engineering and Informatics\",\"volume\":\"108 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 2nd International Conference on Biomedical Engineering and Informatics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BMEI.2009.5305321\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 2nd International Conference on Biomedical Engineering and Informatics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BMEI.2009.5305321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
H +离子浓度转化为数字形式。该芯片采用0.18 um CMOS 1P6M工艺,工作在1.8V电源电压下,正常采样率为6.25MHz。电路(不含焊盘)的面积为0.66mm × 0.43mm。实验数据表明,该结构在pH2 ~ pH12离子浓度范围内具有97个数字计数/pH左右的线性pH响应,且在H +离子浓度范围内的增益误差小于3%。最小可检测pH值可小至±0.25pH。
Extended Gate H+-Ion Sensitive Field Effect Transistor with Signal Interface
H + -ion concentration into digital form. This chip, fabricated in a 0.18-um CMOS 1P6M process, operated at a 1.8V supply voltage and normal sampling rate of 6.25MHz. The circuit (without pad) occupied an area of 0.66mm × 0.43mm. The experimental data showed that this structure has a linear pH response about 97 digital counts/pH in the ion concentration range between pH2 and pH12, and the gain errors within the H + -ion concentrations are less than 3%. The minimum detectable pH value can reach as small as ±0.25pH.