F. Hasoon, A. Al-Douri, A. Al-Foadi, M. Alias, A. Swartzlander, F. Abou-Elfotouh, A. Nelson, R. F. Fisher, R. Dhere, S. Asher, L. Kazmerski
{"title":"光伏器件应用中(ZnSiAs/sub 2/)/sub 1-x/(2GaAs)/sub x/和(CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/的评价与表征","authors":"F. Hasoon, A. Al-Douri, A. Al-Foadi, M. Alias, A. Swartzlander, F. Abou-Elfotouh, A. Nelson, R. F. Fisher, R. Dhere, S. Asher, L. Kazmerski","doi":"10.1109/PVSC.1988.105997","DOIUrl":null,"url":null,"abstract":"A determination of the properties of two alloy semiconductors, (ZnSiAsd/sub 2/)/sub 1-x/(2GaAs)/sub x/ and (CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/, is presented for use in potential photovoltaic device applications. The methods of preparation and processing of single-crystals are reported. Compositional, structural, chemical, and electrooptical parameters are documented. Some emphasis is placed on the properties of the x=0.5 materials, which have bandgaps of 1.88 and 0.80 eV for (ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ and (CuInSe/sub 2/)/sub 0.5/(2InAs)/sub 0.5/, respectively. Preliminary data on CdS/(ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ cell structures are presented to demonstrate the device feasibility of this semiconductor.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"126 1","pages":"1531-1536 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation and characterization of (ZnSiAs/sub 2/)/sub 1-x/(2GaAs)/sub x/ and (CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/ for photovoltaic device applications\",\"authors\":\"F. Hasoon, A. Al-Douri, A. Al-Foadi, M. Alias, A. Swartzlander, F. Abou-Elfotouh, A. Nelson, R. F. Fisher, R. Dhere, S. Asher, L. Kazmerski\",\"doi\":\"10.1109/PVSC.1988.105997\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A determination of the properties of two alloy semiconductors, (ZnSiAsd/sub 2/)/sub 1-x/(2GaAs)/sub x/ and (CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/, is presented for use in potential photovoltaic device applications. The methods of preparation and processing of single-crystals are reported. Compositional, structural, chemical, and electrooptical parameters are documented. Some emphasis is placed on the properties of the x=0.5 materials, which have bandgaps of 1.88 and 0.80 eV for (ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ and (CuInSe/sub 2/)/sub 0.5/(2InAs)/sub 0.5/, respectively. Preliminary data on CdS/(ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ cell structures are presented to demonstrate the device feasibility of this semiconductor.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"126 1\",\"pages\":\"1531-1536 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105997\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation and characterization of (ZnSiAs/sub 2/)/sub 1-x/(2GaAs)/sub x/ and (CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/ for photovoltaic device applications
A determination of the properties of two alloy semiconductors, (ZnSiAsd/sub 2/)/sub 1-x/(2GaAs)/sub x/ and (CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/, is presented for use in potential photovoltaic device applications. The methods of preparation and processing of single-crystals are reported. Compositional, structural, chemical, and electrooptical parameters are documented. Some emphasis is placed on the properties of the x=0.5 materials, which have bandgaps of 1.88 and 0.80 eV for (ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ and (CuInSe/sub 2/)/sub 0.5/(2InAs)/sub 0.5/, respectively. Preliminary data on CdS/(ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ cell structures are presented to demonstrate the device feasibility of this semiconductor.<>
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