具有改进结构的InGaAs/InP SPAD，具有锐利的时序响应

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479095

A. Tosi, F. Acerbi, M. Anti, F. Zappa

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引用次数: 0

摘要

我们设计和制造一个25μm有效面积直径In0.53Ga0.47As /输入单光子雪崩二极管(SPAD)与改进的层状结构和几何扩散以达到良好的探测效率在1550 nm(~ 30%),低寄生脉冲(门重复频率高于1 MHz)和非常好的时机性能(响应时间有宽屏一半最多约57 ps 9 V过剩的偏见和快速尾巴的时间常数约30 ps)。

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InGaAs/InP SPAD with improved structure for sharp timing response

We designed and fabricated a 25 μm active area diameter In0.53Ga0.47As/InP Single-Photon Avalanche Diode (SPAD) with improved layer structure and diffusion geometry in order to achieve good detection efficiency (~30% at 1550 nm), low afterpulsing (gate repetition frequency higher than 1 MHz) and very good timing performance (the timing response has a Full-Width at Half Maximum of about 57 ps at 9 V of excess bias and a fast tail with a time constant of about 30 ps).

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2012 International Electron Devices Meeting

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