S. Vernon, S. Tobin, V. Haven, C. Bajgar, T. M. Dixon, M. Al‐Jassim, R. Ahrenkiel, K. Emery
{"title":"硅基砷化镓太阳能电池效率的提高","authors":"S. Vernon, S. Tobin, V. Haven, C. Bajgar, T. M. Dixon, M. Al‐Jassim, R. Ahrenkiel, K. Emery","doi":"10.1109/PVSC.1988.105704","DOIUrl":null,"url":null,"abstract":"GaAs grown directly on silicon substrates has the potential for reducing the cost and weight of single-junction GaAs cells, as well as enabling a III-VlSi monolithic tandem technology. This paper reports the achievement of a GaAs-on-Si solar cell having an efficiency of 17.6% (one-sun, AM1.5 25°C, SERI measurement), which is the highest reported value for a cell of this structure. A GaAs-on-GaAs cell recently fabricated has been measured at SERI to be 24.3% efficient (AM1.5), which is the highest one-sun value ever reported for any cell.","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"481-485 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Efficiency improvements in GaAs-on-Si solar cells\",\"authors\":\"S. Vernon, S. Tobin, V. Haven, C. Bajgar, T. M. Dixon, M. Al‐Jassim, R. Ahrenkiel, K. Emery\",\"doi\":\"10.1109/PVSC.1988.105704\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaAs grown directly on silicon substrates has the potential for reducing the cost and weight of single-junction GaAs cells, as well as enabling a III-VlSi monolithic tandem technology. This paper reports the achievement of a GaAs-on-Si solar cell having an efficiency of 17.6% (one-sun, AM1.5 25°C, SERI measurement), which is the highest reported value for a cell of this structure. A GaAs-on-GaAs cell recently fabricated has been measured at SERI to be 24.3% efficient (AM1.5), which is the highest one-sun value ever reported for any cell.\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"30 1\",\"pages\":\"481-485 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105704\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs grown directly on silicon substrates has the potential for reducing the cost and weight of single-junction GaAs cells, as well as enabling a III-VlSi monolithic tandem technology. This paper reports the achievement of a GaAs-on-Si solar cell having an efficiency of 17.6% (one-sun, AM1.5 25°C, SERI measurement), which is the highest reported value for a cell of this structure. A GaAs-on-GaAs cell recently fabricated has been measured at SERI to be 24.3% efficient (AM1.5), which is the highest one-sun value ever reported for any cell.
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