标准CMOS中高性能高密度气场效应晶体管阵列

Qian Yu, Xiaopeng Zhong, F. Boussaid, A. Bermak, CY Tsui
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引用次数: 6

摘要

提出了新的气敏场效应管(gas -FET)结构,使标准CMOS制造高性能高密度气体传感器阵列能够与其相关电路完全集成。通过制造包含45µm×46µm传感元件的8×8气体场效应管阵列,研究了所提出的气体场效应管结构的性能。通过呼出的人的呼吸,证明了室温下百万分之丙酮感应能力对非侵入性糖尿病的诊断。性能比较表明,该阵列具有优越的灵敏度,同时在室温下实现超低功耗工作,与先前报道的标准CMOS电阻式气体传感器相比,功耗降低了3个数量级以上。
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High Performance High Density Gas-FET Array in Standard CMOS
New gas sensitive FET (Gas-FET) structures are proposed to enable standard CMOS fabrication of high performance high density gas sensor arrays that are fully integrated with their associated circuitry. The performance of the proposed Gas-FET structures was investigated by fabricating an 8×8 Gas-FET array comprising 45µm×46µm sensing elements. Room temperature sub-ppm acetone sensing capability is demonstrated for non-invasive diabetes diagnosis through exhaled human breath. Performance comparison shows that the fabricated array boasts superior sensitivity while enabling ultra-low power operation at room temperature, with over 3 orders magnitude reduction in power consumption compared to previously reported standard CMOS resistive gas sensors.
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