K. Oda, E. Ohue, I. Suzumura, R. Hayami, A. Kodama, H. Shimamoto, K. Washio
{"title":"自对准选择性外延生长Si/sub - 1-x-y/Ge/sub -x /C/sub -y/ HBT技术，具有170 ghz f/sub max/","authors":"K. Oda, E. Ohue, I. Suzumura, R. Hayami, A. Kodama, H. Shimamoto, K. Washio","doi":"10.1109/IEDM.2001.979505","DOIUrl":null,"url":null,"abstract":"Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"1 1","pages":"15.2.1-15.2.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Self-aligned selective-epitaxial-growth Si/sub 1-x-y/Ge/sub x/C/sub y/ HBT technology featuring 170-GHz f/sub max/\",\"authors\":\"K. Oda, E. Ohue, I. Suzumura, R. Hayami, A. Kodama, H. Shimamoto, K. Washio\",\"doi\":\"10.1109/IEDM.2001.979505\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"1 1\",\"pages\":\"15.2.1-15.2.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979505\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.
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