CdS/CuInSe/sub - 2/太阳能电池的能带不连续和体积与界面复合

G. Turner, R. J. Schwartz, J. Gray
{"title":"CdS/CuInSe/sub - 2/太阳能电池的能带不连续和体积与界面复合","authors":"G. Turner, R. J. Schwartz, J. Gray","doi":"10.1109/PVSC.1988.105951","DOIUrl":null,"url":null,"abstract":"A numerical model which shows the effects of conduction band discontinuity, Delta /sub cb/, in CdS/CuInSe/sub 2/ solar cells is presented. Two scenarios for the dominant mechanism controlling open-circuit voltage, V/sub oc/, are considered: CuInSe/sub 2/ bulk recombination and CdS/CuInSe/sub 2/ interface recombination. The computation shows that the short-circuit current is independent of Delta /sub cb/ for either scenario, while V/sub oc/ is strongly affected only for the interface-dominated case and only for the CuInSe/sub 2/ conduction band positive with respect to the CdS conduction band. The experimental evidence implies that interface domination is not always the case in real devices, if it occurs at all.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"1457-1460 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Band discontinuity and bulk vs. interface recombination in CdS/CuInSe/sub 2/ solar cells\",\"authors\":\"G. Turner, R. J. Schwartz, J. Gray\",\"doi\":\"10.1109/PVSC.1988.105951\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A numerical model which shows the effects of conduction band discontinuity, Delta /sub cb/, in CdS/CuInSe/sub 2/ solar cells is presented. Two scenarios for the dominant mechanism controlling open-circuit voltage, V/sub oc/, are considered: CuInSe/sub 2/ bulk recombination and CdS/CuInSe/sub 2/ interface recombination. The computation shows that the short-circuit current is independent of Delta /sub cb/ for either scenario, while V/sub oc/ is strongly affected only for the interface-dominated case and only for the CuInSe/sub 2/ conduction band positive with respect to the CdS conduction band. The experimental evidence implies that interface domination is not always the case in real devices, if it occurs at all.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"7 1\",\"pages\":\"1457-1460 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105951\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

建立了CdS/CuInSe/ sub2 /太阳能电池中传导带不连续δ /sub cb/影响的数值模型。考虑了两种控制开路电压的主要机制,V/sub / oc/: CuInSe/sub - 2/块复合和CdS/CuInSe/sub - 2/接口复合。计算表明,两种情况下,短路电流都与δ /sub /无关,而V/sub /仅在界面占主导的情况下受到强烈影响,并且仅在δ /sub /导带相对于CdS导带为正的情况下受到影响。实验证据表明,在实际设备中,界面支配并不总是如此,如果它真的存在的话。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Band discontinuity and bulk vs. interface recombination in CdS/CuInSe/sub 2/ solar cells
A numerical model which shows the effects of conduction band discontinuity, Delta /sub cb/, in CdS/CuInSe/sub 2/ solar cells is presented. Two scenarios for the dominant mechanism controlling open-circuit voltage, V/sub oc/, are considered: CuInSe/sub 2/ bulk recombination and CdS/CuInSe/sub 2/ interface recombination. The computation shows that the short-circuit current is independent of Delta /sub cb/ for either scenario, while V/sub oc/ is strongly affected only for the interface-dominated case and only for the CuInSe/sub 2/ conduction band positive with respect to the CdS conduction band. The experimental evidence implies that interface domination is not always the case in real devices, if it occurs at all.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
1.40
自引率
0.00%
发文量
0
期刊最新文献
Minority carrier lifetime of GaAs on silicon Direct glassing of silicon solar cells Radiation resistance studies of amorphous silicon films Efficiency improvements in GaAs-on-Si solar cells Preparation and properties of high deposition rate a-Si:H films and solar cells using disilane
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1