高性能应变锗纳米线pfet的深入研究

2018 IEEE Symposium on VLSI Technology Pub Date : 2018-06-01 DOI:10.1109/VLSIT.2018.8510666

J. Mitard, D. Jang, G. Eneman, H. Arimura, B. Parvais, O. Richard, P. Van Marcke, L. Witters, E. Capogreco, H. Bender, R. Ritzenthaler, H. Mertens, A. Hikavyy, R. Loo, H. Dekkers, F. Sebaai, A. Milenin, N. Horiguchi, A. Mocuta, D. Mocuta, N. Collaert

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引用次数: 11

摘要

提出了一种深入研究纳米线Ge pfet的数字和模拟应用。在对HPA对设备性能的影响有了很好的理解之后，才会得到改进的设备特性。与最好的Si GAA nFET和相似的ID相比，在IOFF=3nA/fin时获得了高达45%的高ID,SAT是在- 0.5 VDD下对成熟的14/16nm pFinFET技术进行基准测试时发现的。温度依赖性研究表明，限制锗短通道输运的机制既不是纯粹的扩散机制，也不是完全的弹道机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An In-depth Study of High-Performing Strained Germanium Nanowires pFETs

An in-depth study of scaled nanowire Ge pFETs for digital and analog applications is proposed. Improved device characteristics are first obtained after gaining a good understanding of the HPA on device performance. Up to 45% higher ID,SAT is obtained at IOFF=3nA/fin when comparing to best Si GAA nFET and similar ID,SAT is found when benchmarking to mature 14/16nm pFinFET technology at −0.5 VDD. The temperature dependent study of ID,SAT highlights that the mechanism limiting the transport in Ge at short channel are neither purely diffusive nor fully ballistic.

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2018 IEEE Symposium on VLSI Technology

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