从存储器到传感器:基于ReRAM技术的超低功耗高选择性氢传感器

2018 IEEE Symposium on VLSI Technology Pub Date : 2018-06-01 DOI:10.1109/VLSIT.2018.8510697

Zhiqiang Wei, K. Homma, K. Katayama, K. Kawai, S. Fujii, Y. Naitoh, H. Shima, H. Akinaga, S. Ito, S. Yoneda

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引用次数: 1

摘要

我们利用优化后的0.18 μm ReRAM工艺制作了一种新型的氢传感器。我们的ReHsensor(电阻式氢传感器)符合ISO26142标准，因为它具有卓越的传感能力，包括高灵敏度，空气和N2环境中的宽氢浓度范围(高达4 vol.%)，高气体选择性(不与CH4, CO, CO2, CH3OH和CH3COCH3反应)，并且对SO2和六甲基二硅氧烷(HMDS)中毒免疫。由于它不需要加热器，因此ReHsensor的功耗非常低，为0.35 mW。我们使用这种氢传感器设备开发了一种用于物联网应用的电池供电的一体化无线氢传感器单元。

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From Memory to Sensor: ultra-Low Power and High Selectivity Hydrogen Sensor Based on ReRAM Technology

We have fabricated a novel hydrogen sensor using optimized 0.18-μm ReRAM process. Our ReHsensor (Resistive Hydrogen Sensor) conforms with the ISO26142 standard in that it exhibits exceptional sensing capabilities, including high sensitivity, wide hydrogen concentration range (up to 4 vol.%) in air and N2 ambient, high gas selectivity (no reaction with CH4, CO, CO2, CH3OH, and CH3COCH3) and is immune to poisoning by SO2 and hexamethyl disiloxane (HMDS). As it does not require a heater, the power consumption of the ReHsensor is very low, at 0.35 mW. We used this hydrogen sensor device to develop a battery-powered all-in-one wireless hydrogen sensor unit for IoT applications.

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2018 IEEE Symposium on VLSI Technology

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