Sn-10Sb-5Cu高温无铅焊料与Cu衬底的液相界面反应

Q. Zeng, Jianjun Guo, Xiaolong Gu, Xinbing Zhao
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引用次数: 2

摘要

锡锑合金在无铅焊料中具有较高的熔化温度,是替代高铅焊料的潜在焊料。然而,在高温焊接过程中,Cu衬底极易被Sn-Sb二元合金溶解,这将导致严重的焊点可靠性问题。基于这一关键问题,我们设计了一种新型的高温无铅Sn-10Sn-5Cu三元焊料,以防止Cu衬底的溶解。本文研究了高温无铅焊料与Cu衬底之间的液相界面反应。在280℃、320℃、360℃和400℃不同温度下,焊料在Cu衬底上进行液相界面反应,反应时间分别为1min、10min、30min和60min。利用散射电子显微镜(SEM)观察了Sn-Sb-Cu钎料和焊点的微观结构。采用能量色散x射线检测器(EDX)和电子探针显微镜(EPMA)分析相组成。在4种反应温度下,界面反应产物包括扇形Cu6Sn5金属间化合物(IMC)层和靠近Cu衬底的扁平Cu3Sn层。界面IMCs厚度随反应时间的变化由界面IMCs层面积除以界面长度来测量。IMC厚度随反应温度和反应时间的增加而增加,且IMC厚度与反应时间的平方根呈线性关系,表明IMC生长动力学受扩散控制。通过IMC生长速率计算扩散系数,随着温度的升高,扩散系数增大,在280℃、320℃、360℃、400℃时分别为2.30 × 10-14、6.84 × 10-14、1.63 × 10-13、1.99 × 10-13 m2/s。通过对不同温度下4种扩散系数的拟合,确定扩散活化能为57.8 KJ/mol,表明扩散机制为晶界扩散。在较低温度280℃和较高温度400℃之间,焊点内部焊料中IMC的显微组织存在巨大差异。
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Liquid-state interfacial reaction of Sn-10Sb-5Cu high temperature lead-free solder and Cu substrate
Sn-Sb alloys are potential solders for replacement of high-Pb solders because of their high melting temperature in lead-free solders. However, Cu substrate is extremely dissolved by the Sn-Sb binary alloy during the high temperature soldering process, which will cause serious reliability problem of the solder joint. Based on this critical issue, we designed a new high temperature lead-free Sn-10Sn-5Cu ternary solder to prevent the dissolution of Cu substrate. In this study, liquid-state interfacial reaction between the high temperature lead-free solder and the Cu substrate was investigated. The liquid-state interfacial reaction of the solder on the Cu substrate was carried out at the different temperature of 280degC, 320degC,360degC and 400degC, and the reaction time was 1min, 10mins, 30mins and 60mins, respectively. Microstructure of the Sn-Sb-Cu bulk solder and the solder joint was observed by scattered electron microscope (SEM). The identification of phase composition was determined by Energy Dispersive X-ray Detector (EDX) and electron probe microscopy analysis (EPMA). During the four reaction temperatures, the interfacial reaction products included a scallop Cu6Sn5 intermetallic compound (IMC) layer and a flat Cu3Sn layer adjacent to Cu substrate. IMCs thickness with the reaction time was measured by the area of interface IMCs layer divided by the interface length. The IMCs thickness increased with the reaction temperature and reaction time, and the relationship between IMC thickness and reaction time was linear with square root of time, which signified that the IMC growth dynamics was diffusion controlled. The diffusion coefficient was calculated by the IMC growth rate, which increased with the higher temperature, corresponding to be 2.30 times 10-14, 6.84 times 10-14, 1.63 times 10-13, 1.99 times 10-13 m2/s for the temperatures of 280degC, 320degC, 360degC and 400degC, respectively. And then the diffusion activation energy was determined to be 57.8 KJ/mol by fitting the four diffusion coefficients at various temperatures, which indicated that the diffusion mechanism was grain boundary diffusion. Between lower temperature of 280degC and higher temperature of 400degC, huge differences existed on the microstructure of IMC in the interior solder of the solder joint.
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