{"title":"采用MOCVD在Si衬底上生长30nm增强模式In0.53Ga0.47As mosfet，具有高跨导性和低导通电阻","authors":"Xiuju Zhou, Qiang Li, C. Tang, K. Lau","doi":"10.1109/IEDM.2012.6479153","DOIUrl":null,"url":null,"abstract":"This paper describes the development of 30nm enhancement-mode In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs grown on Si substrates featuring Al<sub>2</sub>O<sub>3</sub>/InAlAs composite gate stack with extrinsic transconductance of 1700mS/mm at V<sub>ds</sub>=0.5V and on-resistance of 157 Ω·μm. A low-temperature process of post metallization annealing has been developed to achieve enhancement-mode operation. Capacitance-Voltage measurements and TEM observation were carried out to investigate the mechanisms of threshold voltage shift. Furthermore, device scalability down to 30nm is reported.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"69 1","pages":"32.5.1-32.5.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance\",\"authors\":\"Xiuju Zhou, Qiang Li, C. Tang, K. Lau\",\"doi\":\"10.1109/IEDM.2012.6479153\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the development of 30nm enhancement-mode In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs grown on Si substrates featuring Al<sub>2</sub>O<sub>3</sub>/InAlAs composite gate stack with extrinsic transconductance of 1700mS/mm at V<sub>ds</sub>=0.5V and on-resistance of 157 Ω·μm. A low-temperature process of post metallization annealing has been developed to achieve enhancement-mode operation. Capacitance-Voltage measurements and TEM observation were carried out to investigate the mechanisms of threshold voltage shift. Furthermore, device scalability down to 30nm is reported.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":\"69 1\",\"pages\":\"32.5.1-32.5.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479153\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479153","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance
This paper describes the development of 30nm enhancement-mode In0.53Ga0.47As MOSFETs grown on Si substrates featuring Al2O3/InAlAs composite gate stack with extrinsic transconductance of 1700mS/mm at Vds=0.5V and on-resistance of 157 Ω·μm. A low-temperature process of post metallization annealing has been developed to achieve enhancement-mode operation. Capacitance-Voltage measurements and TEM observation were carried out to investigate the mechanisms of threshold voltage shift. Furthermore, device scalability down to 30nm is reported.
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