具有优异的选择性(>105)、耐久性(>108)和热稳定性(>450°C)的碲基二元OTS选择器

2018 IEEE Symposium on VLSI Technology Pub Date : 2018-06-01 DOI:10.1109/VLSIT.2018.8510681

Jongmyung Yoo, Y. Koo, Solomon Amsalu Chekol, Jaehyuk Park, Jeonghwan Song, H. Hwang

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引用次数: 11

摘要

我们研究了各种碲基二元材料用于Ovonic阈值开关(OTS)选择器的应用。我们发现，组成碲化膜的元素的组成和原子半径的差异是最大限度地提高OTS特性的关键控制参数，例如低泄漏电流(器件面积为30 nm2时小于5 nA)，良好的开关耐久性(108)和热稳定性(450°C)。

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Te-based binary OTS selectors with excellent selectivity (>105), endurance (>108) and thermal stability (>450°C)

We have investigated various Te-based binary materials for Ovonic Threshold Switch (OTS) selector application. We found that both Te composition and difference in atomic radius of elements composing the telluride film are the key control parameters to maximize the OTS characteristics such as low leakage current (<5 nA for device area of 30 nm2), good switching endurance (108), and thermal stability (450°C).

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2018 IEEE Symposium on VLSI Technology

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