射频双层石墨烯fet的研究进展

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479059

G. Fiori, G. Iannaccone

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引用次数: 26

摘要

在这项工作中，我们通过原子模拟研究了使用双层石墨烯作为射频应用的FET通道材料可能实现的改进，以及相关的挑战。与单层石墨烯相比，双层石墨烯在更大的输出电阻方面表现出更好的性能，这反过来又有利于低频电压增益和最大增益频率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Insights on radio frequency bilayer graphene FETs

In this work, we investigate through atomistic simulations the possible improvements achievable by using bilayer graphene as FET channel material for radio frequency applications, and the related challenges. Bilayer graphene shows better performance as compared to monolayer graphene in terms of larger output resistance, which in turns is beneficial both for the low frequency voltage gain, and the maximum gain frequency.

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2012 International Electron Devices Meeting

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