H. Schweikardt, M. Lux‐Steiner, M. Vogt, E. Bucher
{"title":"WSe/sub /太阳能电池的DLTS分析","authors":"H. Schweikardt, M. Lux‐Steiner, M. Vogt, E. Bucher","doi":"10.1109/PVSC.1988.105979","DOIUrl":null,"url":null,"abstract":"In/p-WSe/sub 2/ and n-ZnO/p-WSe/sub 2/ junctions are investigated by DLTS. In both kinds of diode a dominant trap concentration is observed at 460 meV for unintentionally doped WSe/sub 2/ crystals. Lower trap concentrations are found to be at 200 meV and 300 meV. The devices exhibit temperature-dependent capacities and capture rates. SIMS and laser mass spectrometry analyses reveal that these crystals are mainly contaminated by Mo, Cr, V, Fe, and Cu. DLTS measurements on WSe/sub 2/ crystals that were doped by these elements during the single-crystal growth of ion etching, indicate that the trap at 460 meV may not be due to the detected impurities Mo and Cu.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"41 1","pages":"1594-1597 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"DLTS analysis of WSe/sub 2/ solar cells\",\"authors\":\"H. Schweikardt, M. Lux‐Steiner, M. Vogt, E. Bucher\",\"doi\":\"10.1109/PVSC.1988.105979\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In/p-WSe/sub 2/ and n-ZnO/p-WSe/sub 2/ junctions are investigated by DLTS. In both kinds of diode a dominant trap concentration is observed at 460 meV for unintentionally doped WSe/sub 2/ crystals. Lower trap concentrations are found to be at 200 meV and 300 meV. The devices exhibit temperature-dependent capacities and capture rates. SIMS and laser mass spectrometry analyses reveal that these crystals are mainly contaminated by Mo, Cr, V, Fe, and Cu. DLTS measurements on WSe/sub 2/ crystals that were doped by these elements during the single-crystal growth of ion etching, indicate that the trap at 460 meV may not be due to the detected impurities Mo and Cu.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"41 1\",\"pages\":\"1594-1597 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105979\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In/p-WSe/sub 2/ and n-ZnO/p-WSe/sub 2/ junctions are investigated by DLTS. In both kinds of diode a dominant trap concentration is observed at 460 meV for unintentionally doped WSe/sub 2/ crystals. Lower trap concentrations are found to be at 200 meV and 300 meV. The devices exhibit temperature-dependent capacities and capture rates. SIMS and laser mass spectrometry analyses reveal that these crystals are mainly contaminated by Mo, Cr, V, Fe, and Cu. DLTS measurements on WSe/sub 2/ crystals that were doped by these elements during the single-crystal growth of ion etching, indicate that the trap at 460 meV may not be due to the detected impurities Mo and Cu.<>
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