通过对GeSe薄层进行Se富集和n掺杂，获得了热稳定和电稳定的高性能集成OTS选择器的半阈值偏置off降至nA范围

2018 IEEE Symposium on VLSI Technology Pub Date : 2018-06-01 DOI:10.1109/VLSIT.2018.8510680

N. S. Avasarala, G. Donadio, T. Witters, K. Opsomer, B. Govoreanu, A. Fantini, S. Clima, H. Oh, S. Kundu, W. Devulder, M. H. van der Veen, J. van Houdt, M. Heyns, L. Goux, G. Kar

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引用次数: 19

摘要

我们报告了使用富硒或掺n的GeSe可以将半阈值偏压(Ioff1/2)下的泄漏电流降低到1nA范围。集成的50nm OTS器件在高达600°C的温度下表现出优异的热稳定性，以及在23MA/cm2的高电流密度下108次循环时的电气稳定性(Vth, Ioff1/2)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

We report on the reduction of leakage current at half threshold bias (Ioff1/2) down to the 1nA range achieved using Se-enriched or N-doped GeSe. Integrated 50nm OTS devices demonstrated excellent thermal stability up to 600°C, as well as electrical stability (Vth, Ioff1/2) when operated at a high on current density of 23MA/cm² for 10⁸ cycles.

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2018 IEEE Symposium on VLSI Technology

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