{"title":"用调制光电流研究a-Si:H中能量分解缺陷动力学","authors":"G. Schumm, G. H. Bauer","doi":"10.1109/PVSC.1988.105678","DOIUrl":null,"url":null,"abstract":"The gap state distribution in a-Si:H for solar cells was investigated by phase shift analysis of modulated photocurrents. Two peaks in the density of states at 0.6 and 0.38 eV below E/sub c/ were detected. Upon light soaking the peaks of shallow states were quenched and the peaks of deep states were enhanced; the original distribution was restored by annealing above 120 degrees C. The formation and annealing kinetics of the deep states were studied. A power law was obtained for the formation. Activation energies for annealing were centered around 1.1 eV, and a correlation of the activation energies with the energetic position of defects in the gap was obtained. To explain the results, a model of the defect structure involving charged and neutral Si defects in different hybridization states is discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"70 1","pages":"154-159 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Energy-resolved defect kinetics in a-Si:H investigated by modulated photocurrents\",\"authors\":\"G. Schumm, G. H. Bauer\",\"doi\":\"10.1109/PVSC.1988.105678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The gap state distribution in a-Si:H for solar cells was investigated by phase shift analysis of modulated photocurrents. Two peaks in the density of states at 0.6 and 0.38 eV below E/sub c/ were detected. Upon light soaking the peaks of shallow states were quenched and the peaks of deep states were enhanced; the original distribution was restored by annealing above 120 degrees C. The formation and annealing kinetics of the deep states were studied. A power law was obtained for the formation. Activation energies for annealing were centered around 1.1 eV, and a correlation of the activation energies with the energetic position of defects in the gap was obtained. To explain the results, a model of the defect structure involving charged and neutral Si defects in different hybridization states is discussed.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"70 1\",\"pages\":\"154-159 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Energy-resolved defect kinetics in a-Si:H investigated by modulated photocurrents
The gap state distribution in a-Si:H for solar cells was investigated by phase shift analysis of modulated photocurrents. Two peaks in the density of states at 0.6 and 0.38 eV below E/sub c/ were detected. Upon light soaking the peaks of shallow states were quenched and the peaks of deep states were enhanced; the original distribution was restored by annealing above 120 degrees C. The formation and annealing kinetics of the deep states were studied. A power law was obtained for the formation. Activation energies for annealing were centered around 1.1 eV, and a correlation of the activation energies with the energetic position of defects in the gap was obtained. To explain the results, a model of the defect structure involving charged and neutral Si defects in different hybridization states is discussed.<>