用调制光电流研究a-Si:H中能量分解缺陷动力学

G. Schumm, G. H. Bauer
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引用次数: 0

摘要

利用调制光电流的相移分析研究了太阳能电池中硅硅氢离子的隙态分布。在E/sub / c/以下的0.6和0.38 eV处检测到两个态密度峰。光浸泡后,浅态峰被淬灭,深态峰被增强;在120℃以上退火后恢复了原始分布,研究了深态的形成和退火动力学。得到了该构造的幂律。退火过程的活化能以1.1 eV为中心,得到了活化能与间隙中缺陷的能量值之间的关系。为了解释这一结果,讨论了不同杂化态下带电和中性硅缺陷的缺陷结构模型。
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Energy-resolved defect kinetics in a-Si:H investigated by modulated photocurrents
The gap state distribution in a-Si:H for solar cells was investigated by phase shift analysis of modulated photocurrents. Two peaks in the density of states at 0.6 and 0.38 eV below E/sub c/ were detected. Upon light soaking the peaks of shallow states were quenched and the peaks of deep states were enhanced; the original distribution was restored by annealing above 120 degrees C. The formation and annealing kinetics of the deep states were studied. A power law was obtained for the formation. Activation energies for annealing were centered around 1.1 eV, and a correlation of the activation energies with the energetic position of defects in the gap was obtained. To explain the results, a model of the defect structure involving charged and neutral Si defects in different hybridization states is discussed.<>
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Minority carrier lifetime of GaAs on silicon Direct glassing of silicon solar cells Radiation resistance studies of amorphous silicon films Efficiency improvements in GaAs-on-Si solar cells Preparation and properties of high deposition rate a-Si:H films and solar cells using disilane
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