下一代功率器件中选择性生长n+金刚石侧栅的金刚石半导体jfet

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6478999

T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, T. Matsumoto, H. Okushi, S. Yamasaki, M. Hatano

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引用次数: 9

摘要

金刚石半导体由于其宽带隙、高击穿场和高导热性而成为下一代功率器件的有吸引力的材料。通过选择性n+型金刚石生长，制备了金刚石结场效应晶体管(jfet)，并在223 ~ 573 K范围内工作。在室温下，jfet的泄漏电流在10-15 A范围内非常低，亚阈值斜率(SS)为81 mV/ 10年。我们证实该器件具有陡峭的SS和低泄漏电流，在10-14-10-15 A的电压下，电压高达423 K。

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Diamond semiconductor JFETs by selectively grown n+-diamond side gates for next generation power devices

Diamond semiconductor is an attractive material for next-generation power devices due to its wide band-gap, high breakdown field, and high thermal conductivity. By selective n+-type diamond growth, diamond junction field effect transistors (JFETs) were fabricated and operated from 223 to 573 K. JFETs show very low leakage currents in the 10-15 A range and a steep subthreshold slope (SS) of 81 mV/decade at room temperature. We confirm that the devices possess steep SS and low leakage current in the 10-14-10-15 A r a n ge s up to 423 K.

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2012 International Electron Devices Meeting

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