{"title":"碲化镉单晶上金属-半导体和金属-绝缘体-半导体结的性质","authors":"F.F. Wang, A. Fahrenbruch, R. Bube","doi":"10.1109/PVSC.1988.105989","DOIUrl":null,"url":null,"abstract":"The fabrication and characterization of metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) junctions on p- and n-type CdTe single crystals using thermal oxide CdTeO/sub 3/ is presented. It is found that for n-type CdTe, the oxide increases the open-circuit voltage over that of the Schottky barrier, whereas for p-type CdTe the oxide decreases the open-circuit voltage. These and several other junction properties can be understood in terms of proposed energy band diagrams for Cr/CdTeO/sub 3//p-CdTe and Au/CdTeO/sub 3//n-CdTe structures.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"14 1","pages":"1635-1640 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Properties of metal-semiconductor and metal-insulator-semiconductor junctions on CdTe single crystals\",\"authors\":\"F.F. Wang, A. Fahrenbruch, R. Bube\",\"doi\":\"10.1109/PVSC.1988.105989\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fabrication and characterization of metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) junctions on p- and n-type CdTe single crystals using thermal oxide CdTeO/sub 3/ is presented. It is found that for n-type CdTe, the oxide increases the open-circuit voltage over that of the Schottky barrier, whereas for p-type CdTe the oxide decreases the open-circuit voltage. These and several other junction properties can be understood in terms of proposed energy band diagrams for Cr/CdTeO/sub 3//p-CdTe and Au/CdTeO/sub 3//n-CdTe structures.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"14 1\",\"pages\":\"1635-1640 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105989\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Properties of metal-semiconductor and metal-insulator-semiconductor junctions on CdTe single crystals
The fabrication and characterization of metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) junctions on p- and n-type CdTe single crystals using thermal oxide CdTeO/sub 3/ is presented. It is found that for n-type CdTe, the oxide increases the open-circuit voltage over that of the Schottky barrier, whereas for p-type CdTe the oxide decreases the open-circuit voltage. These and several other junction properties can be understood in terms of proposed energy band diagrams for Cr/CdTeO/sub 3//p-CdTe and Au/CdTeO/sub 3//n-CdTe structures.<>
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