{"title":"ZnSe中间层CuInSe/ sub2 /太阳能电池的制备及性能研究","authors":"Ji-Beom Yoo, A. Fahrenbruch, R. Bube","doi":"10.1109/PVSC.1988.105946","DOIUrl":null,"url":null,"abstract":"CuInSe/sub 2/-based solar cells were prepared by thermal evaporation using CdS and In/sub 2/O/sub 3/ as window layers, with a thin ZnSe layer between the window layer and the CuInSe/sub 2/. The effects of ZnSe with thicknesses between 200 AA and 2000 AA and ZnSe deposition temperatures between 100 degrees C and 200 degrees C were investigated. For the CdS:In/CdS/ZnSe/CuInSe/sub 2/ cells, as the ZnSe thickness increases, J/sub 0/ decreases and/or the diode factor A increases. For the In/sub 2/O/sub 3//ZnSe/CuInSe/sub 2/ cells the change of J/sub 0/ is much less and there is an increase in the diode factor for increasing ZnSe thickness. Under illumination, the V/sub oc/ of the cell is the same with and without ZnSe and the cells with ZnSe layers thicker than 400 AA show strong photosuppression.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"58 1","pages":"1431-1436 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Preparation and properties of CuInSe/sub 2/ solar cells with a ZnSe intermediate layer\",\"authors\":\"Ji-Beom Yoo, A. Fahrenbruch, R. Bube\",\"doi\":\"10.1109/PVSC.1988.105946\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CuInSe/sub 2/-based solar cells were prepared by thermal evaporation using CdS and In/sub 2/O/sub 3/ as window layers, with a thin ZnSe layer between the window layer and the CuInSe/sub 2/. The effects of ZnSe with thicknesses between 200 AA and 2000 AA and ZnSe deposition temperatures between 100 degrees C and 200 degrees C were investigated. For the CdS:In/CdS/ZnSe/CuInSe/sub 2/ cells, as the ZnSe thickness increases, J/sub 0/ decreases and/or the diode factor A increases. For the In/sub 2/O/sub 3//ZnSe/CuInSe/sub 2/ cells the change of J/sub 0/ is much less and there is an increase in the diode factor for increasing ZnSe thickness. Under illumination, the V/sub oc/ of the cell is the same with and without ZnSe and the cells with ZnSe layers thicker than 400 AA show strong photosuppression.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"58 1\",\"pages\":\"1431-1436 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105946\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105946","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Preparation and properties of CuInSe/sub 2/ solar cells with a ZnSe intermediate layer
CuInSe/sub 2/-based solar cells were prepared by thermal evaporation using CdS and In/sub 2/O/sub 3/ as window layers, with a thin ZnSe layer between the window layer and the CuInSe/sub 2/. The effects of ZnSe with thicknesses between 200 AA and 2000 AA and ZnSe deposition temperatures between 100 degrees C and 200 degrees C were investigated. For the CdS:In/CdS/ZnSe/CuInSe/sub 2/ cells, as the ZnSe thickness increases, J/sub 0/ decreases and/or the diode factor A increases. For the In/sub 2/O/sub 3//ZnSe/CuInSe/sub 2/ cells the change of J/sub 0/ is much less and there is an increase in the diode factor for increasing ZnSe thickness. Under illumination, the V/sub oc/ of the cell is the same with and without ZnSe and the cells with ZnSe layers thicker than 400 AA show strong photosuppression.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
